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Gishi Chung
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Dallas, TX, US
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last 30 patents
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Patent Grant
Dynamic memory storage capacitor having reduced gated diode leakage
Patent number
5,352,913
Issue date
Oct 4, 1994
Texas Instruments Incorporated
Gishi Chung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to eliminate gate filaments on field plate isolated devices
Patent number
5,252,506
Issue date
Oct 12, 1993
Texas Instruments Incorporated
Duane E. Carter
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Boundary cells for improving retention time in memory devices
Patent number
5,251,168
Issue date
Oct 5, 1993
Texas Instruments Incorporated
Gishi Chung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Poly sidewall process to reduce gated diode leakage
Patent number
5,202,279
Issue date
Apr 13, 1993
Texas Instruments Incorporated
Gishi Chung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High angle implant around top of trench to reduce gated diode leakage
Patent number
5,112,762
Issue date
May 12, 1992
Dirk N. Anderson
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating a trench DRAM
Patent number
5,017,506
Issue date
May 21, 1991
Texas Instruments Incorporated
Bing-Whey Shen
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making trench DRAM cell with stacked capacitor and buried...
Patent number
4,978,634
Issue date
Dec 18, 1990
Texas Instruments, Incorporated
Bing-Whey Shen
H01 - BASIC ELECTRIC ELEMENTS