Glen A. Slack

Person

Scotia, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Large aluminum nitride crystals with reduced defects and methods of...
- Patent number 11,225,731
- Issue date Jan 18, 2022
- Crystal IS, Inc.
- Robert Bondokov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 11,183,567
- Issue date Nov 23, 2021
- Crystal IS, Inc.
- Glen A. Slack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 11,124,892
- Issue date Sep 21, 2021
- Crystal IS, Inc.
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 11,015,263
- Issue date May 25, 2021
- Crystal IS, Inc.
- Robert T. Bondokov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Aluminum nitride bulk crystals having high transparency to ultravio...
- Patent number 10,801,127
- Issue date Oct 13, 2020
- Crystal IS, Inc.
- Sandra B. Schujman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 10,697,085
- Issue date Jun 30, 2020
- Crystal IS, Inc.
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 10,692,980
- Issue date Jun 23, 2020
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 10,392,722
- Issue date Aug 27, 2019
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride bulk crystals having high transparency to ultravio...
- Patent number 10,316,428
- Issue date Jun 11, 2019
- Crystal IS, Inc.
- Sandra B. Schujman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 10,125,432
- Issue date Nov 13, 2018
- CRYSTAL IS , INC.
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 10,068,973
- Issue date Sep 4, 2018
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 9,970,127
- Issue date May 15, 2018
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 9,771,666
- Issue date Sep 26, 2017
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 9,670,591
- Issue date Jun 6, 2017
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large aluminum nitride crystals with reduced defects and methods of...
- Patent number 9,598,791
- Issue date Mar 21, 2017
- Crystal IS, Inc.
- Robert Bondokov
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 9,525,032
- Issue date Dec 20, 2016
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride bulk crystals having high transparency to untravio...
- Patent number 9,447,519
- Issue date Sep 20, 2016
- Crystal IS, Inc.
- Sandra B. Schujman
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 9,447,521
- Issue date Sep 20, 2016
- Crystal IS, Inc.
- Leo Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Aluminum nitride bulk crystals having high transparency to ultravio...
- Patent number 9,034,103
- Issue date May 19, 2015
- Crystal IS, Inc.
- Sandra B. Schujman
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 8,896,020
- Issue date Nov 25, 2014
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 8,834,630
- Issue date Sep 16, 2014
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Doped aluminum nitride crystals and methods of making them
- Patent number 8,747,552
- Issue date Jun 10, 2014
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large aluminum nitride crystals with reduced defects and methods of...
- Patent number 8,580,035
- Issue date Nov 12, 2013
- Crystal IS, Inc.
- Robert Bondokov
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 8,545,629
- Issue date Oct 1, 2013
- Crystal IS, Inc.
- Leo J. Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large aluminum nitride crystals with reduced defects and methods of...
- Patent number 8,349,077
- Issue date Jan 8, 2013
- Crystal IS, Inc.
- Robert T. Bondokov
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Defect reduction in seeded aluminum nitride crystal growth
- Patent number 8,323,406
- Issue date Dec 4, 2012
- Crystal IS, Inc.
- Robert T. Bondokov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nitride semiconductor heterostructures and related methods
- Patent number 8,222,650
- Issue date Jul 17, 2012
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 8,123,859
- Issue date Feb 28, 2012
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deep-eutectic melt growth of nitride crystals
- Patent number 8,088,220
- Issue date Jan 3, 2012
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for controllable doping of aluminum nitride bulk crystals
- Patent number 8,012,257
- Issue date Sep 6, 2011
- Crystal IS, Inc.
- Kenneth E. Morgan
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20200354852
- Publication date Nov 12, 2020
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
- Publication number 20200350411
- Publication date Nov 5, 2020
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20200002841
- Publication date Jan 2, 2020
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...
- Publication number 20190316272
- Publication date Oct 17, 2019
- Crystal IS, Inc.
- Sandra B. Schujman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20190106808
- Publication date Apr 11, 2019
- Robert T. Bondokov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
- Publication number 20190035898
- Publication date Jan 31, 2019
- Glen A. Slack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20170350036
- Publication date Dec 7, 2017
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20170191184
- Publication date Jul 6, 2017
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20170159207
- Publication date Jun 8, 2017
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...
- Publication number 20170145592
- Publication date May 25, 2017
- Robert Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
- Publication number 20170084702
- Publication date Mar 23, 2017
- Glen A. Slack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...
- Publication number 20160348273
- Publication date Dec 1, 2016
- Crystal IS, Inc.
- Sandra B. Schujman
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...
- Publication number 20160208417
- Publication date Jul 21, 2016
- Robert Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20150275393
- Publication date Oct 1, 2015
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...
- Publication number 20150218729
- Publication date Aug 6, 2015
- Sandra B. Schujman
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20150079329
- Publication date Mar 19, 2015
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20150013592
- Publication date Jan 15, 2015
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM
- Publication number 20140231725
- Publication date Aug 21, 2014
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...
- Publication number 20140093671
- Publication date Apr 3, 2014
- Robert Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20140061666
- Publication date Mar 6, 2014
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...
- Publication number 20130152852
- Publication date Jun 20, 2013
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20130157442
- Publication date Jun 20, 2013
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20110011332
- Publication date Jan 20, 2011
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...
- Publication number 20110008621
- Publication date Jan 13, 2011
- Sandra B. Schujman
- C30 - CRYSTAL GROWTH
Information Patent Application
Doped Aluminum Nitride Crystals and Methods of Making Them
- Publication number 20100187541
- Publication date Jul 29, 2010
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
- Publication number 20100135349
- Publication date Jun 3, 2010
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
- Publication number 20090283028
- Publication date Nov 19, 2009
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS
- Publication number 20090050050
- Publication date Feb 26, 2009
- Crystal IS, Inc.
- Glen A. Slack
- C30 - CRYSTAL GROWTH
Information Patent Application
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
- Publication number 20080182092
- Publication date Jul 31, 2008
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Application
Powder metallurgy crucible for aluminum nitride crystal growth
- Publication number 20080134957
- Publication date Jun 12, 2008
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH

Glen A. Slack

Person

Patents Grantslast 30 patents

Large aluminum nitride crystals with reduced defects and methods of...

Doped aluminum nitride crystals and methods of making them

Defect reduction in seeded aluminum nitride crystal growth

Defect reduction in seeded aluminum nitride crystal growth

Aluminum nitride bulk crystals having high transparency to ultravio...

Defect reduction in seeded aluminum nitride crystal growth

Doped aluminum nitride crystals and methods of making them

Defect reduction in seeded aluminum nitride crystal growth

Aluminum nitride bulk crystals having high transparency to ultravio...

Defect reduction in seeded aluminum nitride crystal growth

Doped aluminum nitride crystals and methods of making them

Method and apparatus for producing large, single-crystals of alumin...

Defect reduction in seeded aluminum nitride crystal growth

Defect reduction in seeded aluminum nitride crystal growth

Large aluminum nitride crystals with reduced defects and methods of...

Doped aluminum nitride crystals and methods of making them

Aluminum nitride bulk crystals having high transparency to untravio...

Method and apparatus for producing large, single-crystals of alumin...

Aluminum nitride bulk crystals having high transparency to ultravio...

Method and apparatus for producing large, single-crystals of alumin...

Defect reduction in seeded aluminum nitride crystal growth

Doped aluminum nitride crystals and methods of making them

Large aluminum nitride crystals with reduced defects and methods of...

Method and apparatus for producing large, single-crystals of alumin...

Large aluminum nitride crystals with reduced defects and methods of...

Defect reduction in seeded aluminum nitride crystal growth

Nitride semiconductor heterostructures and related methods

Method and apparatus for producing large, single-crystals of alumin...

Deep-eutectic melt growth of nitride crystals

Methods for controllable doping of aluminum nitride bulk crystals

Patents Applicationslast 30 patents

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...

DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM

ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF...

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIO...

Doped Aluminum Nitride Crystals and Methods of Making Them

NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS

NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS

DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS

DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Powder metallurgy crucible for aluminum nitride crystal growth