Glenn A. Glass

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 12,206,027
- Issue date Jan 21, 2025
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for achieving multiple transistor fin dimensions on a si...
- Patent number 12,046,600
- Issue date Jul 23, 2024
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures including a titanium silicide material
- Patent number 12,046,654
- Issue date Jul 23, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned 3-D epitaxial structures for MOS device fabrication
- Patent number 12,046,517
- Issue date Jul 23, 2024
- Tahoe Research, LTD.
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for achieving multiple transistor fin dimensions on a si...
- Patent number 12,021,081
- Issue date Jun 25, 2024
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit contact structures
- Patent number 11,942,526
- Issue date Mar 26, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 11,923,421
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 11,769,836
- Issue date Sep 26, 2023
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
- Patent number 11,764,275
- Issue date Sep 19, 2023
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium nMOS transistors
- Patent number 11,699,756
- Issue date Jul 11, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with ion- or fixed charge-based field plate structures
- Patent number 11,658,217
- Issue date May 23, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS and PMOS str...
- Patent number 11,610,995
- Issue date Mar 21, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire for transistor integration
- Patent number 11,588,017
- Issue date Feb 21, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating CMOS FinFETs by selectively etching a straine...
- Patent number 11,581,406
- Issue date Feb 14, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistors employing carbon-based layers
- Patent number 11,538,905
- Issue date Dec 27, 2022
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having vertically dis...
- Patent number 11,527,612
- Issue date Dec 13, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with non-collapsed fins and methods of t...
- Patent number 11,515,304
- Issue date Nov 29, 2022
- Tahoe Research, LTD.
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage structure for high performance GaN-based HEM...
- Patent number 11,515,407
- Issue date Nov 29, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column IV transistors for PMOS integration
- Patent number 11,508,813
- Issue date Nov 22, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming dislocation enhanced strain in NMOS and PMOS str...
- Patent number 11,482,618
- Issue date Oct 25, 2022
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction employing germanium overlayer pre-cont...
- Patent number 11,476,344
- Issue date Oct 18, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having underlying dop...
- Patent number 11,469,299
- Issue date Oct 11, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions in integrated circuit structures
- Patent number 11,450,738
- Issue date Sep 20, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-rich nanowire transistor with relaxed buffer layer
- Patent number 11,450,739
- Issue date Sep 20, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 11,444,166
- Issue date Sep 13, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION
- Publication number 20240379453
- Publication date Nov 14, 2024
- Tahoe Research, Ltd.
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...
- Publication number 20240347610
- Publication date Oct 17, 2024
- Intel Corporation
- Koustav GANGULY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20240332392
- Publication date Oct 3, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS
- Publication number 20240321892
- Publication date Sep 26, 2024
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SI...
- Publication number 20240290789
- Publication date Aug 29, 2024
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTACT STRUCTURES
- Publication number 20240128340
- Publication date Apr 18, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...
- Publication number 20230420574
- Publication date Dec 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...
- Publication number 20230387324
- Publication date Nov 30, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...
- Publication number 20230207655
- Publication date Jun 29, 2023
- Intel Corporation
- Rushabh D. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20230207651
- Publication date Jun 29, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...
- Publication number 20230197724
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CHANNEL REGION FOR GATE ALL AROUND (GAA) TRANSISTOR STRUCTURES
- Publication number 20230197812
- Publication date Jun 22, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20230197848
- Publication date Jun 22, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...
- Publication number 20230178658
- Publication date Jun 8, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20230170388
- Publication date Jun 1, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...
- Publication number 20230170420
- Publication date Jun 1, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SI...
- Publication number 20230127985
- Publication date Apr 27, 2023
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...
- Publication number 20230098459
- Publication date Mar 30, 2023
- Tahoe Research, Ltd.
- Nabil G. MISTKAWI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...
- Publication number 20230074199
- Publication date Mar 9, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20230006063
- Publication date Jan 5, 2023
- Daedalus Prime LLC
- Michael Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...
- Publication number 20220416024
- Publication date Dec 29, 2022
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20220406895
- Publication date Dec 22, 2022
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20220271125
- Publication date Aug 25, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...
- Publication number 20220238714
- Publication date Jul 28, 2022
- Intel Corporation
- Michael JACKSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANS...
- Publication number 20220199402
- Publication date Jun 23, 2022
- Intel Corporation
- Koustav Ganguly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20220109072
- Publication date Apr 7, 2022
- Intel Corporation
- Benjamin CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION EMPLOYING GERMANIUM OVERLAYER PRE-CONT...
- Publication number 20220102523
- Publication date Mar 31, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...
- Publication number 20220102521
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20220093797
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS

Glenn A. Glass

Person

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having nanowires with...

Reducing off-state leakage in semiconductor devices

Gate-all-around integrated circuit structures having germanium-dope...

Low resistance approaches for fabricating contacts and the resultin...

Techniques for achieving multiple transistor fin dimensions on a si...

Integrated circuit structures including a titanium silicide material

Self-aligned 3-D epitaxial structures for MOS device fabrication

Techniques for achieving multiple transistor fin dimensions on a si...

Integrated circuit contact structures

Integrated circuit structures having germanium-based channels

Gate-all-around integrated circuit structures having nanowires with...

Indium-containing fin of a transistor device with an indium-rich core

Transistors including source/drain employing double-charge dopants

Non-selective epitaxial source/drain deposition to reduce dopant di...

Source/drain diffusion barrier for germanium nMOS transistors

Transistors with ion- or fixed charge-based field plate structures

Methods of forming dislocation enhanced strain in NMOS and PMOS str...

Nanowire for transistor integration

Method of fabricating CMOS FinFETs by selectively etching a straine...

Nanowire transistors employing carbon-based layers

Gate-all-around integrated circuit structures having vertically dis...

Integrated circuit devices with non-collapsed fins and methods of t...

High breakdown voltage structure for high performance GaN-based HEM...

Column IV transistors for PMOS integration

Methods of forming dislocation enhanced strain in NMOS and PMOS str...

Contact resistance reduction employing germanium overlayer pre-cont...

Gate-all-around integrated circuit structures having underlying dop...

Source/drain regions in integrated circuit structures

Germanium-rich nanowire transistor with relaxed buffer layer

Backside source/drain replacement for semiconductor devices with me...

Patents Applicationslast 30 patents

SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION

CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATI...

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

CONSTRAINED EPITAXIAL FORMATION USING DIELECTRIC WALLS

TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SI...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

INTEGRATED CIRCUIT CONTACT STRUCTURES

MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...

FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...

HYBRID CHANNEL REGION FOR GATE ALL AROUND (GAA) TRANSISTOR STRUCTURES

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...

TECHNIQUES FOR ACHIEVING MULTIPLE TRANSISTOR FIN DIMENSIONS ON A SI...

INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS AND PMOS STR...

SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANS...

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES

CONTACT RESISTANCE REDUCTION EMPLOYING GERMANIUM OVERLAYER PRE-CONT...

LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS