Glenn C. MacDougall

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Essex Junction, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned emitter-base region
- Patent number 9,276,093
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES, INC.
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned emitter-base region
- Patent number 8,932,931
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating doped polysilicon lines
- Patent number 7,303,952
- Issue date Dec 4, 2007
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing dark current effects in a charge couple device
- Patent number 6,271,054
- Issue date Aug 7, 2001
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED EMITTER-BASE REGION
- Publication number 20150054123
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMITTER-BASE REGION
- Publication number 20130207235
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Margaret A. Faucher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING DOPED POLYSILICON LINES
- Publication number 20070287275
- Publication date Dec 13, 2007
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING DOPED POLYSILICON LINES
- Publication number 20060073689
- Publication date Apr 6, 2006
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS