Goran MIHAJLOVIC

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive memory device including a magnetoresistance amplif...
- Patent number 11,968,907
- Issue date Apr 23, 2024
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device including a plurality of reference l...
- Patent number 11,839,162
- Issue date Dec 5, 2023
- Western Digital Technologies, Inc.
- Alan Kalitsov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device including a reference layer side die...
- Patent number 11,361,805
- Issue date Jun 14, 2022
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque MRAM memory cell with in-stack t...
- Patent number 11,004,489
- Issue date May 11, 2021
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic recording devices and methods using a write-field-enhancem...
- Patent number 10,957,346
- Issue date Mar 23, 2021
- Western Digital Technologies, Inc.
- Gonçalo Marcos Baião De Albuquerque
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular SOT MRAM
- Patent number 10,891,999
- Issue date Jan 12, 2021
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque MRAM memory cell with cap layer...
- Patent number 10,832,750
- Issue date Nov 10, 2020
- SanDisk Technologies LLC
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat assisted perpendicular spin transfer torque MRAM memory cell
- Patent number 10,777,248
- Issue date Sep 15, 2020
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular SOT-MRAM memory cell using spin swapping induced spin...
- Patent number 10,726,893
- Issue date Jul 28, 2020
- SanDisk Technologies LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for writing to magnetic media using an AC bias...
- Patent number 10,643,642
- Issue date May 5, 2020
- Western Digital Technologies, Inc.
- Gonçalo Marcos Baião De Albuquerque
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for writing to magnetic media using an AC bias...
- Patent number 10,388,305
- Issue date Aug 20, 2019
- Western Digital Technologies, Inc.
- Gonçalo Marcos Baião De Albuquerque
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT MRAM cell with perpendicular free layer and its cross-point arr...
- Patent number 10,381,552
- Issue date Aug 13, 2019
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three terminal SOT memory cell with anomalous hall effect
- Patent number 10,290,337
- Issue date May 14, 2019
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate voltage controlled perpendicular spin orbit torque MRAM memory...
- Patent number 10,276,783
- Issue date Apr 30, 2019
- SanDisk Technologies LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin accumulation torque MRAM
- Patent number 10,211,393
- Issue date Feb 19, 2019
- SanDisk Technologies LLC
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point spin accumulation torque MRAM
- Patent number 10,134,457
- Issue date Nov 20, 2018
- SanDisk Technologies LLC
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM with voltage dependent in-plane magnetic anisotropy
- Patent number 10,056,430
- Issue date Aug 21, 2018
- SanDisk Technologies LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque MRAM memory cell with enhanced thermal stability
- Patent number 9,953,692
- Issue date Apr 24, 2018
- SanDisk Technologies LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Three terminal SOT memory cell with anomalous Hall effect
- Patent number 9,830,966
- Issue date Nov 28, 2017
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensor utilizing rashba effect in a two-dimensional conductor
- Patent number 9,429,633
- Issue date Aug 30, 2016
- HGST Netherlands B.V.
- Goran Mihajlovic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic stabilization and scissor design for anomalous hall effect...
- Patent number 9,293,160
- Issue date Mar 22, 2016
- HGST Netherlands B.V.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Grant
Giant magneto resistive sensor and method for making same
- Patent number 9,177,576
- Issue date Nov 3, 2015
- HGST Netherlands B.V.
- Matthew Joseph Carey
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic read sensor using spin hall effect
- Patent number 9,099,119
- Issue date Aug 4, 2015
- HGST Netherlands B.V.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNETORESISTANCE AMPLIF...
- Publication number 20240016065
- Publication date Jan 11, 2024
- Western Digital Technologies, Inc.
- Goran MIHAJLOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE INCLUDING A REFERENCE LAYER SIDE DIE...
- Publication number 20210225421
- Publication date Jul 22, 2021
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Goran MIHAJLOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL WITH IN-STACK T...
- Publication number 20200402559
- Publication date Dec 24, 2020
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SOT MRAM
- Publication number 20200402561
- Publication date Dec 24, 2020
- Western Digital Technologies, Inc.
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RECORDING DEVICES AND METHODS USING A WRITE-FIELD-ENHANCEM...
- Publication number 20200349967
- Publication date Nov 5, 2020
- Western Digital Technologies, Inc.
- Gonçalo Marcos Baião DE ALBUQUERQUE
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL
- Publication number 20200273510
- Publication date Aug 27, 2020
- SANDISK TECHNOLOGIES LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SOT-MRAM MEMORY CELL USING SPIN SWAPPING INDUCED SPIN...
- Publication number 20200043538
- Publication date Feb 6, 2020
- SANDISK TECHNOLOGIES LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR WRITING TO MAGNETIC MEDIA USING AN AC BIAS...
- Publication number 20190325902
- Publication date Oct 24, 2019
- Western Digital Technologies, Inc.
- Gonçalo Marcos Baião DE ALBUQUERQUE
- G11 - INFORMATION STORAGE
Information Patent Application
GATE VOLTAGE CONTROLLED PERPINDICULAR SPIN ORBIT TORQUE MRAM MEMORY...
- Publication number 20180358542
- Publication date Dec 13, 2018
- SanDisk Technologies LLC
- Goran Mihajlovic
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ACCUMULATION TORQUE MRAM
- Publication number 20180240966
- Publication date Aug 23, 2018
- SanDisk Technologies LLC
- Goran Mihajlovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL SOT MEMORY CELL WITH ANOMALOUS HALL EFFECT
- Publication number 20180137904
- Publication date May 17, 2018
- Western Digital Technologies, Inc.
- Goran MIHAJLOVIC
- G11 - INFORMATION STORAGE
Information Patent Application
SOT MRAM CELL WITH PERPENDICULAR FREE LAYER AND ITS CROSS-POINT ARR...
- Publication number 20170365777
- Publication date Dec 21, 2017
- HGST NETHERLANDS B.V.
- Goran MIHAJLOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three Terminal Spin Orbit Torque Memory Cell with In-Stack MAGNETIC...
- Publication number 20170125078
- Publication date May 4, 2017
- HGST NETHERLANDS B.V.
- Goran MIHAJLOVIC
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC READ HEAD HAVING SPIN HALL EFFECT LAYER
- Publication number 20150287426
- Publication date Oct 8, 2015
- HGST NETHERLANDS B.V.
- Goran MIHAJLOVIC
- G11 - INFORMATION STORAGE
Information Patent Application
GIANT MAGNETO RESISTIVE SENSOR AND METHOD FOR MAKING SAME
- Publication number 20150098153
- Publication date Apr 9, 2015
- HGST NETHERLANDS B.V.
- Matthew Joseph CAREY
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC READ SENSOR USING SPIN HALL EFFECT
- Publication number 20140226239
- Publication date Aug 14, 2014
- HGST NETHERLANDS B.V.
- Goran Mihajlovic
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC SENSOR UTILIZING RASHBA EFFECT IN A TWO-DIMENSIONAL CONDUCTOR
- Publication number 20140225604
- Publication date Aug 14, 2014
- HGST NETHERLANDS B.V.
- Goran Mihajlovic
- B82 - NANO-TECHNOLOGY

Goran MIHAJLOVIC

Person

Patents Grantslast 30 patents

Magnetoresistive memory device including a magnetoresistance amplif...

Magnetoresistive memory device including a plurality of reference l...

Magnetoresistive memory device including a reference layer side die...

Perpendicular spin transfer torque MRAM memory cell with in-stack t...

Magnetic recording devices and methods using a write-field-enhancem...

Perpendicular SOT MRAM

Perpendicular spin transfer torque MRAM memory cell with cap layer...

Heat assisted perpendicular spin transfer torque MRAM memory cell

Perpendicular SOT-MRAM memory cell using spin swapping induced spin...

Apparatus and method for writing to magnetic media using an AC bias...

Apparatus and method for writing to magnetic media using an AC bias...

SOT MRAM cell with perpendicular free layer and its cross-point arr...

Three terminal SOT memory cell with anomalous hall effect

Gate voltage controlled perpendicular spin orbit torque MRAM memory...

Spin accumulation torque MRAM

Cross-point spin accumulation torque MRAM

MRAM with voltage dependent in-plane magnetic anisotropy

Spin orbit torque MRAM memory cell with enhanced thermal stability

Three terminal SOT memory cell with anomalous Hall effect

Magnetic sensor utilizing rashba effect in a two-dimensional conductor

Magnetic stabilization and scissor design for anomalous hall effect...

Giant magneto resistive sensor and method for making same

Magnetic read sensor using spin hall effect

Patents Applicationslast 30 patents

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A MAGNETORESISTANCE AMPLIF...

MAGNETORESISTIVE MEMORY DEVICE INCLUDING A REFERENCE LAYER SIDE DIE...

PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL WITH IN-STACK T...

PERPENDICULAR SOT MRAM

MAGNETIC RECORDING DEVICES AND METHODS USING A WRITE-FIELD-ENHANCEM...

PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL

PERPENDICULAR SOT-MRAM MEMORY CELL USING SPIN SWAPPING INDUCED SPIN...

APPARATUS AND METHOD FOR WRITING TO MAGNETIC MEDIA USING AN AC BIAS...

GATE VOLTAGE CONTROLLED PERPINDICULAR SPIN ORBIT TORQUE MRAM MEMORY...

SPIN ACCUMULATION TORQUE MRAM

THREE TERMINAL SOT MEMORY CELL WITH ANOMALOUS HALL EFFECT

SOT MRAM CELL WITH PERPENDICULAR FREE LAYER AND ITS CROSS-POINT ARR...

Three Terminal Spin Orbit Torque Memory Cell with In-Stack MAGNETIC...

MAGNETIC READ HEAD HAVING SPIN HALL EFFECT LAYER

GIANT MAGNETO RESISTIVE SENSOR AND METHOD FOR MAKING SAME

MAGNETIC READ SENSOR USING SPIN HALL EFFECT

MAGNETIC SENSOR UTILIZING RASHBA EFFECT IN A TWO-DIMENSIONAL CONDUCTOR