Gordon C. Godejahn Jr.

Person

Santa Ana, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for high density VLSI circuits, having self-aligned gates a...
- Patent number 4,587,711
- Issue date May 13, 1986
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for and structure of high density VLSI circuits, having sel...
- Patent number 4,506,437
- Issue date Mar 26, 1985
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for and structure of high density VLSI circuits, having sel...
- Patent number 4,477,962
- Issue date Oct 23, 1984
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for and structure of high density VLSI circuits, having sel...
- Patent number 4,455,737
- Issue date Jun 26, 1984
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of high density VLSI circuits, having self-...
- Patent number 4,277,881
- Issue date Jul 14, 1981
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-alignment of gate contacts at local or remote sites
- Patent number 4,221,044
- Issue date Sep 9, 1980
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts in an ion implanted VLSI circuit
- Patent number 4,221,045
- Issue date Sep 9, 1980
- Rockwell International Corporation
- Gordon C. Godejahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for and structure of high density VLSI circuits, having inh...
- Patent number 4,192,059
- Issue date Mar 11, 1980
- Rockwell International Corporation
- Mahboob Khan
- H01 - BASIC ELECTRIC ELEMENTS

Gordon C. Godejahn Jr.

Person

Patents Grantslast 30 patents

Process for high density VLSI circuits, having self-aligned gates a...

Process for and structure of high density VLSI circuits, having sel...

Process for and structure of high density VLSI circuits, having sel...

Process for and structure of high density VLSI circuits, having sel...

Process for fabrication of high density VLSI circuits, having self-...

Self-alignment of gate contacts at local or remote sites

Self-aligned contacts in an ion implanted VLSI circuit

Process for and structure of high density VLSI circuits, having inh...