Gregory A. Schrantz

Person

Melbourne, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diamond insulator devices and method of fabrication
- Patent number 5,683,939
- Issue date Nov 4, 1997
- Harris Corporation
- Gregory Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with diamond insulator
- Patent number 5,650,639
- Issue date Jul 22, 1997
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on diamond circuit structure
- Patent number 5,561,303
- Issue date Oct 1, 1996
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die separation method for silicon on diamond circuit structures
- Patent number 5,552,345
- Issue date Sep 3, 1996
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded wafer process incorporating diamond insulator
- Patent number 5,272,104
- Issue date Dec 21, 1993
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned top gate channel barrier region in i...
- Patent number 5,120,669
- Issue date Jun 9, 1992
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer surface gate JFET having enhanced gate-channel breakdown...
- Patent number 5,118,632
- Issue date Jun 2, 1992
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline silicon ohmic contacts to group III-arsenide compou...
- Patent number 5,027,187
- Issue date Jun 25, 1991
- Harris Corporation
- William E. O'Mara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer surface gate JFET having enhanced gate-channel breakdown...
- Patent number 5,008,719
- Issue date Apr 16, 1991
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted JFET with self-aligned source and drain
- Patent number 4,912,053
- Issue date Mar 27, 1990
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for increasing gate-drain breakdown voltage of ion-implan...
- Patent number 4,683,485
- Issue date Jul 28, 1987
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS

Gregory A. Schrantz

Person

Patents Grantslast 30 patents

Diamond insulator devices and method of fabrication

Integrated circuit with diamond insulator

Silicon on diamond circuit structure

Die separation method for silicon on diamond circuit structures

Bonded wafer process incorporating diamond insulator

Method of forming self-aligned top gate channel barrier region in i...

Dual layer surface gate JFET having enhanced gate-channel breakdown...

Polycrystalline silicon ohmic contacts to group III-arsenide compou...

Dual layer surface gate JFET having enhanced gate-channel breakdown...

Ion implanted JFET with self-aligned source and drain

Technique for increasing gate-drain breakdown voltage of ion-implan...