Gregory D. U'ren

Person

Corona del Mar, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration of an NPN device with phosphorus emitter and controlled...
- Patent number 8,987,785
- Issue date Mar 24, 2015
- Newport Fab, LLC
- Greg D. U'ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and non-selective epitaxy for base intergration in a BiCM...
- Patent number 7,795,703
- Issue date Sep 14, 2010
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of phosphorus emitter in an NPN device in a BiCMOS process
- Patent number 7,498,620
- Issue date Mar 3, 2009
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor formed using selective and non-selective epitaxy...
- Patent number 7,462,923
- Issue date Dec 9, 2008
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for effective BiCMOS process integration
- Patent number 7,335,547
- Issue date Feb 26, 2008
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for integration of phosphorous emitter in an N...
- Patent number 7,297,992
- Issue date Nov 20, 2007
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and non-selective epitaxy for base integration in a BiCMO...
- Patent number 7,291,898
- Issue date Nov 6, 2007
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN transistor having reduced extrinsic base resistance and improve...
- Patent number 7,235,861
- Issue date Jun 26, 2007
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent control of polycrystalline silicon-germanium in an HBT...
- Patent number 7,183,627
- Issue date Feb 27, 2007
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe layer having small poly grains
- Patent number 7,132,700
- Issue date Nov 7, 2006
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor emitter having alternating undoped and doped layers
- Patent number 7,078,744
- Issue date Jul 18, 2006
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing contaminants in fabrication of semiconductor...
- Patent number 7,064,073
- Issue date Jun 20, 2006
- Newport Fab, LLC
- Gregory D. U'ren
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
NPN transistor having reduced extrinsic base resistance and improve...
- Patent number 7,064,361
- Issue date Jun 20, 2006
- Newport Fab. LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing extrinsic base resistance in an NPN transistor
- Patent number 6,893,931
- Issue date May 17, 2005
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of SiGe layer having small poly grains and r...
- Patent number 6,861,308
- Issue date Mar 1, 2005
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing extrinsic base resistance and improving manufac...
- Patent number 6,830,982
- Issue date Dec 14, 2004
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of emitter of a transistor and related struc...
- Patent number 6,797,578
- Issue date Sep 28, 2004
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metastable base in a high-performance HBT
- Patent number 6,781,214
- Issue date Aug 24, 2004
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Band gap compensated HBT
- Patent number 6,759,674
- Issue date Jul 6, 2004
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a selective eptaxial HBT emitter
- Patent number 6,680,235
- Issue date Jan 20, 2004
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating collector-base band gap in an HBT
- Patent number 6,673,688
- Issue date Jan 6, 2004
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for eliminating collector-base band gap discontinuity in...
- Patent number 6,639,256
- Issue date Oct 28, 2003
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for a selective epitaxial HBT emitter
- Patent number 6,617,619
- Issue date Sep 9, 2003
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating a metastable base into a high-performance HB...
- Patent number 6,586,297
- Issue date Jul 1, 2003
- Newport Fab, LLC
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of contaminants prior to epitaxy and related structure
- Patent number 6,580,104
- Issue date Jun 17, 2003
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for independent control of polycrystalline silicon-germanium...
- Patent number 6,559,022
- Issue date May 6, 2003
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for elimination of contaminants prior to epitaxy
- Patent number 6,514,886
- Issue date Feb 4, 2003
- Newport Fab, LLC
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for independent control of polycrystalline silicon-germanium...
- Patent number 6,365,479
- Issue date Apr 2, 2002
- Conexant Systems, Inc.
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integration of an NPN device with phosphorus emitter and controlled...
- Publication number 20090127585
- Publication date May 21, 2009
- Newport Fab, LLC dba Jazz Semiconductor.
- Greg D. U'ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabrication of SiGe layer having small poly grains and r...
- Publication number 20040227157
- Publication date Nov 18, 2004
- Newport Fab, LLC dba Jazz Semiconductor.
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Band gap compensated HBT
- Publication number 20030146448
- Publication date Aug 7, 2003
- Conexant Systems, Inc.
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ELIMINATING COLLECTOR-BASE BAND GAP DISCON...
- Publication number 20030146449
- Publication date Aug 7, 2003
- Conexant Systems, Inc.
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for independent control of polycrystalline silicon-germanium...
- Publication number 20020090788
- Publication date Jul 11, 2002
- Conexant Systems, Inc.
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for independent control of polycrystalline silicon-germanium...
- Publication number 20020061628
- Publication date May 23, 2002
- Conexant Systems, Inc.
- Gregory D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS

Gregory D. U'ren

Person

Patents Grantslast 30 patents

Integration of an NPN device with phosphorus emitter and controlled...

Selective and non-selective epitaxy for base intergration in a BiCM...

Integration of phosphorus emitter in an NPN device in a BiCMOS process

Bipolar transistor formed using selective and non-selective epitaxy...

Method for effective BiCMOS process integration

Method and structure for integration of phosphorous emitter in an N...

Selective and non-selective epitaxy for base integration in a BiCMO...

NPN transistor having reduced extrinsic base resistance and improve...

Independent control of polycrystalline silicon-germanium in an HBT...

SiGe layer having small poly grains

Transistor emitter having alternating undoped and doped layers

Technique for reducing contaminants in fabrication of semiconductor...

NPN transistor having reduced extrinsic base resistance and improve...

Reducing extrinsic base resistance in an NPN transistor

Method for fabrication of SiGe layer having small poly grains and r...

Method for reducing extrinsic base resistance and improving manufac...

Method for fabrication of emitter of a transistor and related struc...

Metastable base in a high-performance HBT

Band gap compensated HBT

Method for fabricating a selective eptaxial HBT emitter

Method for eliminating collector-base band gap in an HBT

Structure for eliminating collector-base band gap discontinuity in...

Structure for a selective epitaxial HBT emitter

Method for integrating a metastable base into a high-performance HB...

Elimination of contaminants prior to epitaxy and related structure

Method for independent control of polycrystalline silicon-germanium...

Method for elimination of contaminants prior to epitaxy

Method for independent control of polycrystalline silicon-germanium...

Patents Applicationslast 30 patents

Integration of an NPN device with phosphorus emitter and controlled...

Method for fabrication of SiGe layer having small poly grains and r...

Band gap compensated HBT

METHOD AND STRUCTURE FOR ELIMINATING COLLECTOR-BASE BAND GAP DISCON...

Method for independent control of polycrystalline silicon-germanium...

Method for independent control of polycrystalline silicon-germanium...