Gregory J. Armstrong

Person

Houston, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High density EPROM cell and process for fabricating same
- Patent number 5,894,162
- Issue date Apr 13, 1999
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a high density EPROM cell by removing a portion of the...
- Patent number 5,571,736
- Issue date Nov 5, 1996
- Texas Instruments Incorporated
- James L. Paterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high density DRAM having increased capacitance ar...
- Patent number 5,374,580
- Issue date Dec 20, 1994
- Texas Instruments Incorporated
- David A. Baglee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density dynamic RAM with trench capacitor
- Patent number 5,170,234
- Issue date Dec 8, 1992
- Texas Instruments Incorporated
- David A. Baglee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field-plate isolated CMOS devices
- Patent number 4,696,092
- Issue date Sep 29, 1987
- Texas Instruments Incorporated
- Robert R. Doering
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density CMOS integrated circuit manufacturing process
- Patent number 4,677,739
- Issue date Jul 7, 1987
- Texas Instruments Incorporated
- Robert R. Doering
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making field-plate isolated CMOS devices
- Patent number 4,561,170
- Issue date Dec 31, 1985
- Texas Instruments Incorporated
- Robert R. Doering
- H01 - BASIC ELECTRIC ELEMENTS

Gregory J. Armstrong

Person

Patents Grantslast 30 patents

High density EPROM cell and process for fabricating same

Fabricating a high density EPROM cell by removing a portion of the...

Method of forming high density DRAM having increased capacitance ar...

High density dynamic RAM with trench capacitor

Method of making field-plate isolated CMOS devices

High density CMOS integrated circuit manufacturing process

Method of making field-plate isolated CMOS devices