Guang Zeng

Person

Haar, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Single chip power diode and method of producing a single chip power...
- Patent number 12,132,122
- Issue date Oct 29, 2024
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate control method of MOS-gated power device
- Patent number 11,876,509
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Guang Zeng
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Short circuit protection structure in MOS-gated power devices
- Patent number 11,688,732
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method of producing a diode
- Patent number 11,664,464
- Issue date May 30, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE
- Publication number 20240290878
- Publication date Aug 29, 2024
- INFINEON TECHNOLOGIES AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTROL METHOD OF MOS-GATED POWER DEVICE
- Publication number 20240088890
- Publication date Mar 14, 2024
- INFINEON TECHNOLOGIES AG
- Guang ZENG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE CONTROL METHOD OF MOS-GATED POWER DEVICE
- Publication number 20240039526
- Publication date Feb 1, 2024
- INFINEON TECHNOLOGIES AG
- Guang ZENG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Single Chip Power Diode and Method of Producing a Single Chip Power...
- Publication number 20230290885
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC SNUBBER WITH POLY SILICON RESISTOR AND CAPACITOR FORMED FROM JUN...
- Publication number 20230290773
- Publication date Sep 14, 2023
- INFINEON TECHNOLOGIES AG
- Dethard PETERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
- Publication number 20220406928
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and Method of Producing a Diode
- Publication number 20220029030
- Publication date Jan 27, 2022
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short Circuit Protection Structure in MOS-Gated Power Devices
- Publication number 20210193646
- Publication date Jun 24, 2021
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Single chip power diode and method of producing a single chip power...

Gate control method of MOS-gated power device

Short circuit protection structure in MOS-gated power devices

Diode and method of producing a diode

Patents Applicationslast 30 patents

VERTICAL POWER SEMICONDUCTOR DEVICE

GATE CONTROL METHOD OF MOS-GATED POWER DEVICE

GATE CONTROL METHOD OF MOS-GATED POWER DEVICE

Single Chip Power Diode and Method of Producing a Single Chip Power...

RC SNUBBER WITH POLY SILICON RESISTOR AND CAPACITOR FORMED FROM JUN...

SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION

Diode and Method of Producing a Diode

Short Circuit Protection Structure in MOS-Gated Power Devices