Guangjun YANG

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of controlling internal address for a serial nor flash memory
- Patent number 11,450,387
- Issue date Sep 20, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump circuit
- Patent number 11,114,937
- Issue date Sep 7, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory and operation method thereof
- Patent number 10,957,399
- Issue date Mar 23, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuits and methods of reference-current generation for flash
- Patent number 10,319,448
- Issue date Jun 11, 2019
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating flash memory unit
- Patent number 9,640,252
- Issue date May 2, 2017
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Boost capacitor circuit and charge pump
- Patent number 9,525,340
- Issue date Dec 20, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Programming verification control circuit and method for control the...
- Patent number 9,520,202
- Issue date Dec 13, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory unit and memory array, and programming, erasing and re...
- Patent number 9,406,685
- Issue date Aug 2, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory, and erasing method, programming method and reading method t...
- Patent number 9,396,801
- Issue date Jul 19, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump system and memory
- Patent number 9,337,723
- Issue date May 10, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Jian Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash-memory low-speed read mode control circuit
- Patent number 9,202,582
- Issue date Dec 1, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array device and method for reducing read current of the same
- Patent number 9,153,322
- Issue date Oct 6, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Row decoding circuit and memory
- Patent number 9,082,486
- Issue date Jul 14, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump circuit and memory
- Patent number 9,030,891
- Issue date May 12, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump circuit
- Patent number 9,013,230
- Issue date Apr 21, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Flash memory device
- Patent number 8,942,044
- Issue date Jan 27, 2015
- Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory
- Patent number 8,755,231
- Issue date Jun 17, 2014
- Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SERIAL FLASH MEMORY AND ADDRESS CONTROL METHOD THEREOF
- Publication number 20210407580
- Publication date Dec 30, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE PUMP CIRCUIT
- Publication number 20210067034
- Publication date Mar 4, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MEMORY AND OPERATION METHOD THEREOF
- Publication number 20200234769
- Publication date Jul 23, 2020
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS AND METHODS OF REFERENCE-CURRENT GENERATION FOR FLASH
- Publication number 20180137923
- Publication date May 17, 2018
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING VERIFICATION CONTROL CIRCUIT AND METHOD FOR CONTROL THE...
- Publication number 20160358665
- Publication date Dec 8, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
BOOST CAPACITOR CIRCUIT AND CHARGE PUMP
- Publication number 20160359407
- Publication date Dec 8, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun Yang
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Memory, And Erasing Method, Programming Method And Reading Method T...
- Publication number 20160189780
- Publication date Jun 30, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY UNIT AND MEMORY ARRAY, AND PROGRAMMING, ERASING AND R...
- Publication number 20160148942
- Publication date May 26, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH-MEMORY LOW-SPEED READ MODE CONTROL CIRCUIT
- Publication number 20150332776
- Publication date Nov 19, 2015
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY AND READING METHOD THEREOF, AND CIRCUIT FOR READING MEMORY
- Publication number 20150194193
- Publication date Jul 9, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Shengbo ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE PUMP SYSTEM AND MEMORY
- Publication number 20150194878
- Publication date Jul 9, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Jian HU
- G11 - INFORMATION STORAGE
Information Patent Application
Charge Pump Circuit and Memory
- Publication number 20140211575
- Publication date Jul 31, 2014
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
ROW DECODING CIRCUIT AND MEMORY
- Publication number 20140177333
- Publication date Jun 26, 2014
- GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE PUMP CIRCUIT
- Publication number 20140152378
- Publication date Jun 5, 2014
- GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Guangjun YANG
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MEMORY ARRAY DEVICE AND METHOD FOR REDUCING READ CURRENT OF THE SAME
- Publication number 20140085986
- Publication date Mar 27, 2014
- GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY
- Publication number 20130235670
- Publication date Sep 12, 2013
- GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Guangjun YANG
- G11 - INFORMATION STORAGE
Information Patent Application
Flash Memory Device
- Publication number 20130077406
- Publication date Mar 28, 2013
- GRACE SEMICONDUCTOR MANUFACTURING CORPORATION
- Guangjun YANG
- G11 - INFORMATION STORAGE

Guangjun YANG

Person

Patents Grantslast 30 patents

Method of controlling internal address for a serial nor flash memory

Charge pump circuit

Memory and operation method thereof

Circuits and methods of reference-current generation for flash

Method of operating flash memory unit

Boost capacitor circuit and charge pump

Programming verification control circuit and method for control the...

Flash memory unit and memory array, and programming, erasing and re...

Memory, and erasing method, programming method and reading method t...

Charge pump system and memory

Flash-memory low-speed read mode control circuit

Memory array device and method for reducing read current of the same

Row decoding circuit and memory

Charge pump circuit and memory

Charge pump circuit

Flash memory device

Flash memory

Patents Applicationslast 30 patents

SERIAL FLASH MEMORY AND ADDRESS CONTROL METHOD THEREOF

CHARGE PUMP CIRCUIT

MEMORY AND OPERATION METHOD THEREOF

CIRCUITS AND METHODS OF REFERENCE-CURRENT GENERATION FOR FLASH

PROGRAMMING VERIFICATION CONTROL CIRCUIT AND METHOD FOR CONTROL THE...

BOOST CAPACITOR CIRCUIT AND CHARGE PUMP

Memory, And Erasing Method, Programming Method And Reading Method T...

FLASH MEMORY UNIT AND MEMORY ARRAY, AND PROGRAMMING, ERASING AND R...

FLASH-MEMORY LOW-SPEED READ MODE CONTROL CIRCUIT

MEMORY AND READING METHOD THEREOF, AND CIRCUIT FOR READING MEMORY

CHARGE PUMP SYSTEM AND MEMORY

Charge Pump Circuit and Memory

ROW DECODING CIRCUIT AND MEMORY

CHARGE PUMP CIRCUIT

MEMORY ARRAY DEVICE AND METHOD FOR REDUCING READ CURRENT OF THE SAME

FLASH MEMORY

Flash Memory Device