Guangyu Huang

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical string driver with channel field management structure
- Patent number 12,148,802
- Issue date Nov 19, 2024
- INTEL NDTM US LLC
- Dong Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical string driver with extended gate junction structure
- Patent number 12,089,412
- Issue date Sep 10, 2024
- INTEL NDTM US LLC
- Dong Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures comprising vertical channel material and havi...
- Patent number 12,029,039
- Issue date Jul 2, 2024
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array and methods used in forming a memory array
- Patent number 11,937,423
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices including indium-containing materials, and related e...
- Patent number 11,908,948
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures comprising vertical channel material and havi...
- Patent number 11,569,266
- Issue date Jan 31, 2023
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having polycrystalline first semiconductor ma...
- Patent number 11,527,620
- Issue date Dec 13, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including oxide semiconductive materials, and related m...
- Patent number 11,430,895
- Issue date Aug 30, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array and methods used in forming a memory array
- Patent number 11,380,699
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated structures containing vertically-stacked memory cells
- Patent number 11,309,321
- Issue date Apr 19, 2022
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including memory cells and related methods
- Patent number 11,107,832
- Issue date Aug 31, 2021
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having polycrystalline first semiconductor ma...
- Patent number 11,038,027
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated structures comprising vertical channe...
- Patent number 11,024,643
- Issue date Jun 1, 2021
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and systems with string drivers including high band gap mat...
- Patent number 11,018,255
- Issue date May 25, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a flash memory device
- Patent number 10,903,219
- Issue date Jan 26, 2021
- Intel Corporation
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures containing vertically-stacked memory cells
- Patent number 10,892,268
- Issue date Jan 12, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical multi-gate string driver for memory device
- Patent number 10,777,281
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Guangyu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-gate string drivers having shared pillar structure
- Patent number 10,734,399
- Issue date Aug 4, 2020
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices including memory cells and related methods
- Patent number 10,608,012
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures comprising channel material extending into so...
- Patent number 10,418,379
- Issue date Sep 17, 2019
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures containing vertically-stacked memory cells
- Patent number 10,381,365
- Issue date Aug 13, 2019
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory devices incorporating a polydielectric layer
- Patent number 10,290,642
- Issue date May 14, 2019
- Intel Corporation
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetrical multi-gate string driver for memory device
- Patent number 10,170,194
- Issue date Jan 1, 2019
- Micron Technology, Inc.
- Guangyu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming integrated structures comprising vertical channe...
- Patent number 9,941,298
- Issue date Apr 10, 2018
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures containing vertically-stacked memory cells
- Patent number 9,761,599
- Issue date Sep 12, 2017
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated structures comprising vertical channel material and havi...
- Patent number 9,741,737
- Issue date Aug 22, 2017
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked thin channels for boost and leakage improvement
- Patent number 9,412,821
- Issue date Aug 9, 2016
- Intel Corporation
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory structure
- Patent number 9,281,318
- Issue date Mar 8, 2016
- Intel Corporation
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked thin channels for boost and leakage improvement
- Patent number 9,209,199
- Issue date Dec 8, 2015
- Intel Corporation
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional memory structure
- Patent number 9,129,859
- Issue date Sep 8, 2015
- Intel Corporation
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated Structures Comprising Vertical Channel Material and Havi...
- Publication number 20240357819
- Publication date Oct 24, 2024
- Lodestar Licensing Group LLC
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array and Methods Used in Forming a Memory Array
- Publication number 20240244837
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Structures Comprising Vertical Channel Material and Havi...
- Publication number 20230171962
- Publication date Jun 1, 2023
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES INCLUDING INDIUM-CONTAINING MATERIALS, AND RELATED E...
- Publication number 20220406941
- Publication date Dec 22, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array and Methods Used in Forming a Memory Array
- Publication number 20220278120
- Publication date Sep 1, 2022
- Micron Technology, Inc.
- Luan C. Tran
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL CHANNEL WITH CONDUCTIVE STRUCTURES TO IMPROVE STRING CURRENT
- Publication number 20220189987
- Publication date Jun 16, 2022
- Intel Corporation
- Henok T. MEBRAHTU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RAISED EXTENSION REGIONS AND SEMICONDUCTOR FINS
- Publication number 20220181341
- Publication date Jun 9, 2022
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY HAVING IMPROVED PERFORMANCE AS A CONSEQUENCE OF PROGRA...
- Publication number 20220084606
- Publication date Mar 17, 2022
- Intel Corporation
- Xiang YANG
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTORS INCLUDING OXIDE SEMICONDUCTIVE MATERIALS, AND RELATED M...
- Publication number 20210384354
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS
- Publication number 20210375925
- Publication date Dec 2, 2021
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Polycrystalline First Semiconductor Ma...
- Publication number 20210265467
- Publication date Aug 26, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MAT...
- Publication number 20210265499
- Publication date Aug 26, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Comprising Vertical Channel Material and Havi...
- Publication number 20210257387
- Publication date Aug 19, 2021
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Containing Vertically-Stacked Memory Cells
- Publication number 20210082937
- Publication date Mar 18, 2021
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE
- Publication number 20210005626
- Publication date Jan 7, 2021
- Micron Technology, Inc.
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Having Polycrystalline First Semiconductor Ma...
- Publication number 20200287003
- Publication date Sep 10, 2020
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array And Methods Used In Forming A Memory Array
- Publication number 20200279855
- Publication date Sep 3, 2020
- Micron Technology, Inc.
- Luan C. Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRING DRIVER WITH EXTENDED GATE JUNCTION STRUCTURE
- Publication number 20200227429
- Publication date Jul 16, 2020
- Intel Corporation
- Dong JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRING DRIVER WITH CHANNEL FIELD MANAGEMENT STRUCTURE
- Publication number 20200227525
- Publication date Jul 16, 2020
- Intel Corporation
- Dong JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS
- Publication number 20200219899
- Publication date Jul 9, 2020
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICES AND RELATED METHODS
- Publication number 20200098770
- Publication date Mar 26, 2020
- Intel Corporation
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Comprising Vertical Channel Material and Havi...
- Publication number 20190371816
- Publication date Dec 5, 2019
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Containing Vertically-Stacked Memory Cells
- Publication number 20190312047
- Publication date Oct 10, 2019
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE
- Publication number 20190206889
- Publication date Jul 4, 2019
- Akira Goda
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRICAL MULTI-GATE STRING DRIVER FOR MEMORY DEVICE
- Publication number 20190122737
- Publication date Apr 25, 2019
- Micron Technology, Inc.
- Guangyu Huang
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY DEVICES INCORPORATING A POLYDIELECTRIC LAYER
- Publication number 20190103411
- Publication date Apr 4, 2019
- Intel Corporation
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MAT...
- Publication number 20190067475
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES INCLUDING VERTICAL MEMORY CELLS AND RELATED METHODS
- Publication number 20190067326
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Comprising Vertical Channel Material and Havi...
- Publication number 20180226427
- Publication date Aug 9, 2018
- Micron Technology, Inc.
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures Containing Vertically-Stacked Memory Cells
- Publication number 20170373081
- Publication date Dec 28, 2017
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS

Guangyu Huang

Person

Patents Grantslast 30 patents

Vertical string driver with channel field management structure

Vertical string driver with extended gate junction structure

Integrated structures comprising vertical channel material and havi...

Memory array and methods used in forming a memory array

Memory devices including indium-containing materials, and related e...

Integrated structures comprising vertical channel material and havi...

Integrated assemblies having polycrystalline first semiconductor ma...

Transistors including oxide semiconductive materials, and related m...

Memory array and methods used in forming a memory array

Integrated structures containing vertically-stacked memory cells

Apparatuses including memory cells and related methods

Integrated assemblies having polycrystalline first semiconductor ma...

Methods of forming integrated structures comprising vertical channe...

Devices and systems with string drivers including high band gap mat...

Method for making a flash memory device

Integrated structures containing vertically-stacked memory cells

Asymmetrical multi-gate string driver for memory device

Multi-gate string drivers having shared pillar structure

Memory devices including memory cells and related methods

Integrated structures comprising channel material extending into so...

Integrated structures containing vertically-stacked memory cells

Flash memory devices incorporating a polydielectric layer

Asymmetrical multi-gate string driver for memory device

Methods of forming integrated structures comprising vertical channe...

Integrated structures containing vertically-stacked memory cells

Integrated structures comprising vertical channel material and havi...

Stacked thin channels for boost and leakage improvement

Three dimensional memory structure

Stacked thin channels for boost and leakage improvement

Three dimensional memory structure

Patents Applicationslast 30 patents

Integrated Structures Comprising Vertical Channel Material and Havi...

Memory Array and Methods Used in Forming a Memory Array

Integrated Structures Comprising Vertical Channel Material and Havi...

MEMORY DEVICES INCLUDING INDIUM-CONTAINING MATERIALS, AND RELATED E...

Memory Array and Methods Used in Forming a Memory Array

VERTICAL CHANNEL WITH CONDUCTIVE STRUCTURES TO IMPROVE STRING CURRENT

TRANSISTORS WITH RAISED EXTENSION REGIONS AND SEMICONDUCTOR FINS

FLASH MEMORY HAVING IMPROVED PERFORMANCE AS A CONSEQUENCE OF PROGRA...

TRANSISTORS INCLUDING OXIDE SEMICONDUCTIVE MATERIALS, AND RELATED M...

APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS

Integrated Assemblies Having Polycrystalline First Semiconductor Ma...

DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MAT...

Integrated Structures Comprising Vertical Channel Material and Havi...

Integrated Structures Containing Vertically-Stacked Memory Cells

MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE

Integrated Assemblies Having Polycrystalline First Semiconductor Ma...

Memory Array And Methods Used In Forming A Memory Array

VERTICAL STRING DRIVER WITH EXTENDED GATE JUNCTION STRUCTURE

VERTICAL STRING DRIVER WITH CHANNEL FIELD MANAGEMENT STRUCTURE

APPARATUSES INCLUDING MEMORY CELLS AND RELATED METHODS

FLASH MEMORY DEVICES AND RELATED METHODS

Integrated Structures Comprising Vertical Channel Material and Havi...

Integrated Structures Containing Vertically-Stacked Memory Cells

MULTI-GATE STRING DRIVERS HAVING SHARED PILLAR STRUCTURE

ASYMMETRICAL MULTI-GATE STRING DRIVER FOR MEMORY DEVICE

FLASH MEMORY DEVICES INCORPORATING A POLYDIELECTRIC LAYER

DEVICES AND SYSTEMS WITH STRING DRIVERS INCLUDING HIGH BAND GAP MAT...

MEMORY DEVICES INCLUDING VERTICAL MEMORY CELLS AND RELATED METHODS

Integrated Structures Comprising Vertical Channel Material and Havi...

Integrated Structures Containing Vertically-Stacked Memory Cells