Guanping Wu

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 12,185,550
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 12,137,568
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,956,953
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,785,776
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,758,732
- Issue date Sep 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,728,326
- Issue date Aug 15, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 11,545,505
- Issue date Jan 3, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 11,527,547
- Issue date Dec 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 11,482,532
- Issue date Oct 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabricating method thereof
- Patent number 11,437,400
- Issue date Sep 6, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 11,410,983
- Issue date Aug 9, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 10,923,491
- Issue date Feb 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three- dimensional memory device
- Patent number 10,910,397
- Issue date Feb 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,886,291
- Issue date Jan 5, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabrication method thereof
- Patent number 10,867,983
- Issue date Dec 15, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Joint opening structures of three-dimensional memory devices and me...
- Patent number 10,847,532
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and fabricating method thereof
- Patent number 10,797,067
- Issue date Oct 6, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming channel hole in three-dimensional memory device...
- Patent number 10,790,297
- Issue date Sep 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Baoyou Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid bonding contact structure of three-dimensional memory device
- Patent number 10,593,690
- Issue date Mar 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact structure of three-dimensional memory device
- Patent number 10,553,604
- Issue date Feb 4, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,541,249
- Issue date Jan 21, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ziqi Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20250024683
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240407172
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240188291
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230389323
- Publication date Nov 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230363169
- Publication date Nov 9, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230087468
- Publication date Mar 23, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20230016627
- Publication date Jan 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230005950
- Publication date Jan 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210134826
- Publication date May 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210126005
- Publication date Apr 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210118866
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210118867
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...
- Publication number 20210074718
- Publication date Mar 11, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20200403004
- Publication date Dec 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200295025
- Publication date Sep 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200152653
- Publication date May 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING CHANNEL HOLE IN THREE-DIMENSIONAL MEMORY DEVICE...
- Publication number 20200119042
- Publication date Apr 16, 2020
- Yangtze Memory Technologies Co., Ltd.
- Baoyou Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20190221558
- Publication date Jul 18, 2019
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20190123054
- Publication date Apr 25, 2019
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...
- Publication number 20190081060
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device and Fabricating Method Thereof
- Publication number 20190067322
- Publication date Feb 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Ziqi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190057974
- Publication date Feb 21, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043879
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS

Guanping Wu

Person

Patents Grantslast 30 patents

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Three-dimensional memory device and fabrication method thereof

Through array contact structure of three-dimensional memory device

Hybrid bonding contact structure of three-dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Three-dimensional memory device and fabricating method thereof

Three-dimensional memory device and fabrication method thereof

Hybrid bonding contact structure of three-dimensional memory device

Through array contact structure of three- dimensional memory device

Joint opening structures of three-dimensional memory devices and me...

Three-dimensional memory device and fabrication method thereof

Joint opening structures of three-dimensional memory devices and me...

Three-dimensional memory device and fabricating method thereof

Method for forming channel hole in three-dimensional memory device...

Hybrid bonding contact structure of three-dimensional memory device

Through array contact structure of three-dimensional memory device

Three-dimensional memory devices and fabricating methods thereof

Patents Applicationslast 30 patents

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

SEMICONDUCTOR DEVICES

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

JOINT OPENING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND ME...

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATING METHOD THEREOF

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

METHOD FOR FORMING CHANNEL HOLE IN THREE-DIMENSIONAL MEMORY DEVICE...

THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

JOINT OPENNING STRUCTURES OF THREE-DIMENSIONAL MEMORY DEVICES AND M...

Three-Dimensional Memory Device and Fabricating Method Thereof

HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE