Guenole Jan

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 12,167,701
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,758,820
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,683,994
- Issue date Jun 20, 2023
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for measuring saturation magnetization of magnetic films and...
- Patent number 11,609,296
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Monolayer-by-monolayer growth of MgO layers using mg sublimation an...
- Patent number 11,597,993
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,573,270
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 11,563,170
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction devices for magnetic random access me...
- Patent number 11,495,738
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic resonance (FMR) electrical testing apparatus for spin...
- Patent number 11,397,226
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 11,316,098
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with low defect rate after high temperatur...
- Patent number 11,309,489
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,264,566
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...
- Patent number 11,237,240
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,107,977
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...
- Patent number 11,092,661
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical testing apparatus for spintronics devices
- Patent number 11,054,471
- Issue date Jul 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ion beam etching process design to minimize sidewall re-deposition
- Patent number 11,043,632
- Issue date Jun 22, 2021
- Headway Technologies, Inc.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,031,547
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,024,798
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20240379270
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20230371395
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...
- Publication number 20230060687
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20220238798
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20220149272
- Publication date May 12, 2022
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20210391533
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Reduction of Capping Layer Resistance Area Product for Magnetic Dev...
- Publication number 20210367146
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Electrical Testing Apparatus for Spintronics Devices
- Publication number 20210325460
- Publication date Oct 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Protective Passivation Layer for Magnetic Tunnel Junctions
- Publication number 20210293912
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G01 - MEASURING TESTING
Information Patent Application
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...
- Publication number 20210262078
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...
- Publication number 20210210674
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition
- Publication number 20210083180
- Publication date Mar 18, 2021
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Measuring Saturation Magnetization of Magnetic Films and...
- Publication number 20210025958
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20210020830
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20200403149
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...
- Publication number 20200395534
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...
- Publication number 20200393525
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Application
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...
- Publication number 20200386840
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...
- Publication number 20200327918
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...
- Publication number 20200270737
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Guenole Jan

Person

Patents Grantslast 30 patents

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Dual magnetic tunnel junction (DMTJ) stack design

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Reduction of capping layer resistance area product for magnetic dev...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Protective passivation layer for magnetic tunnel junctions

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Seed layer for multilayer magnetic materials

Method for measuring saturation magnetization of magnetic films and...

Monolayer-by-monolayer growth of MgO layers using mg sublimation an...

Electrical testing apparatus for spintronics devices

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

Dual magnetic tunnel junction devices for magnetic random access me...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Ferromagnetic resonance (FMR) electrical testing apparatus for spin...

High thermal stability by doping of oxide capping layer for spin to...

Magnetic tunnel junction with low defect rate after high temperatur...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Minimal thickness, low switching voltage magnetic free layers using...

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...

Seed layer for multilayer magnetic materials

Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...

Electrical testing apparatus for spintronics devices

Ion beam etching process design to minimize sidewall re-deposition

Reduction of capping layer resistance area product for magnetic dev...

Protective passivation layer for magnetic tunnel junctions

Patents Applicationslast 30 patents

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Seed Layer for Multilayer Magnetic Materials

Reduction of Capping Layer Resistance Area Product for Magnetic Dev...

Electrical Testing Apparatus for Spintronics Devices

Protective Passivation Layer for Magnetic Tunnel Junctions

Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Nitride Diffusion Barrier Structure for Spintronic Applications

Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition

Method for Measuring Saturation Magnetization of Magnetic Films and...

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Magnetic Tunnel Junction with Low Defect Rate after High Temperatur...

Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...

Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...

Method and Circuits for Programming STT-MRAM Cells for Reducing Bac...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation an...