Gunda Beernink

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Performance enhancement in transistors by providing an embedded str...
- Patent number 9,484,459
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in transistors by providing an embedded str...
- Patent number 9,224,863
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistors comprising high-k metal gate electrode st...
- Patent number 8,835,209
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sophisticated gate electrode structures formed by cap layer removal...
- Patent number 8,765,559
- Issue date Jul 1, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with embedded strain-inducing material formed in caviti...
- Patent number 8,674,458
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a channel semiconductor alloy by forming a hard mask l...
- Patent number 8,614,122
- Issue date Dec 24, 2013
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting of strain caused in a transistor channel by semiconductor...
- Patent number 8,518,784
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an embedded strain-inducing material having a gradu...
- Patent number 8,466,520
- Issue date Jun 18, 2013
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of thickness variations of a threshold semiconductor allo...
- Patent number 8,361,858
- Issue date Jan 29, 2013
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device comprising an embedded semiconductor alloy having...
- Patent number 8,338,274
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an embedded strain-inducing material having a gradu...
- Patent number 8,202,777
- Issue date Jun 19, 2012
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING AN EMBEDDED STR...
- Publication number 20160071978
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20130307090
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF THICKNESS VARIATIONS OF A THRESHOLD SEMICONDUCTOR ALLO...
- Publication number 20130161695
- Publication date Jun 27, 2013
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING AN EMBEDDED STR...
- Publication number 20120305995
- Publication date Dec 6, 2012
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITI...
- Publication number 20120306027
- Publication date Dec 6, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...
- Publication number 20120223363
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Transistors Comprising High-K Metal Gate Electrode St...
- Publication number 20120211838
- Publication date Aug 23, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sophisticated Gate Electrode Structures Formed by Cap Layer Removal...
- Publication number 20120196417
- Publication date Aug 2, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A HARD MASK L...
- Publication number 20120164805
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...
- Publication number 20120153354
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20120153350
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Stephan KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with Embedded Strain-Inducing Material and Dummy Gate El...
- Publication number 20120025315
- Publication date Feb 2, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF THICKNESS VARIATIONS OF A THRESHOLD SEMICONDUCTOR ALLO...
- Publication number 20100193881
- Publication date Aug 5, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20100164016
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...
- Publication number 20100164020
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY HAVING...
- Publication number 20100163939
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Gunda Beernink

Person

Patents Grantslast 30 patents

Performance enhancement in transistors by providing an embedded str...

Performance enhancement in transistors by providing an embedded str...

Complementary transistors comprising high-k metal gate electrode st...

Sophisticated gate electrode structures formed by cap layer removal...

Transistors with embedded strain-inducing material formed in caviti...

Formation of a channel semiconductor alloy by forming a hard mask l...

Adjusting of strain caused in a transistor channel by semiconductor...

Transistor with an embedded strain-inducing material having a gradu...

Reduction of thickness variations of a threshold semiconductor allo...

Transistor device comprising an embedded semiconductor alloy having...

Transistor with an embedded strain-inducing material having a gradu...

Patents Applicationslast 30 patents

PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING AN EMBEDDED STR...

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

REDUCTION OF THICKNESS VARIATIONS OF A THRESHOLD SEMICONDUCTOR ALLO...

PERFORMANCE ENHANCEMENT IN TRANSISTORS BY PROVIDING AN EMBEDDED STR...

TRANSISTORS WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITI...

TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...

Complementary Transistors Comprising High-K Metal Gate Electrode St...

Sophisticated Gate Electrode Structures Formed by Cap Layer Removal...

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A HARD MASK L...

PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

Transistor with Embedded Strain-Inducing Material and Dummy Gate El...

REDUCTION OF THICKNESS VARIATIONS OF A THRESHOLD SEMICONDUCTOR ALLO...

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...

TRANSISTOR DEVICE COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY HAVING...