Gunho JO

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked transistors having an isolation region therebetween and a c...
- Patent number 12,356,665
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
Information Patent Grant
Devices including stacked nanosheet transistors
- Patent number 12,310,106
- Issue date May 20, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
Information Patent Grant
Methods of forming fin-on-nanosheet transistor stacks
- Patent number 12,255,099
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including stacked nanosheet transistors
- Patent number 11,843,001
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20240072060
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...
- Publication number 20230361112
- Publication date Nov 9, 2023
- Samsung Electronics Co. Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...
- Publication number 20230352408
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- MYUNGHOON JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL LAYER INTE...
- Publication number 20230352529
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Gunho JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...
- Publication number 20230343824
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOUNDARY GATE STRUCTURE FOR DIFFUSION BREAK IN 3D-STACKED SEMICONDU...
- Publication number 20230343825
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG I...
- Publication number 20230343845
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS
- Publication number 20230133731
- Publication date May 4, 2023
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...
- Publication number 20230086084
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20220367520
- Publication date Nov 17, 2022
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIZE-CONTROLLABLE MULTI-STACK SEMICONDUCTOR DEVICE AND METHOD OF MA...
- Publication number 20220336582
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- Gunho JO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Stacked transistors having an isolation region therebetween and a c...

Devices including stacked nanosheet transistors

Methods of forming fin-on-nanosheet transistor stacks

Size-controllable multi-stack semiconductor device and method of ma...

Devices including stacked nanosheet transistors

Patents Applicationslast 30 patents

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...

INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL LAYER INTE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...

BOUNDARY GATE STRUCTURE FOR DIFFUSION BREAK IN 3D-STACKED SEMICONDU...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE WITH RMG I...

METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS

STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A C...

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

SIZE-CONTROLLABLE MULTI-STACK SEMICONDUCTOR DEVICE AND METHOD OF MA...