Guo Xiang Song

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making split-gate non-volatile memory cells with erase ga...
- Patent number 11,621,335
- Issue date Apr 4, 2023
- Silicon Storage Technology, Inc.
- Chunming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making memory cells, high voltage devices and logic devic...
- Patent number 11,444,091
- Issue date Sep 13, 2022
- Silicon Storage Technology, Inc.
- Jack Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making memory cells, high voltage devices and logic devic...
- Patent number 11,322,507
- Issue date May 3, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device with planar split gate non-volatile memo...
- Patent number 11,315,940
- Issue date Apr 26, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate non-volatile memory cells with erase gates disposed over...
- Patent number 11,316,024
- Issue date Apr 26, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Split-gate, 2-bit non-volatile memory cell with erase gate disposed...
- Patent number 11,315,635
- Issue date Apr 26, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MAKING SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GA...
- Publication number 20220216316
- Publication date Jul 7, 2022
- Silicon Storage Technology, Inc.
- CHUNMING WANG
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...
- Publication number 20220101920
- Publication date Mar 31, 2022
- Silicon Storage Technology, Inc.
- CHUNMING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GATES DISPOSED OVER...
- Publication number 20220102517
- Publication date Mar 31, 2022
- Silicon Storage Technology, Inc.
- CHUNMING WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...
- Publication number 20220093623
- Publication date Mar 24, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Memory Cells, High Voltage Devices And Logic Devic...
- Publication number 20220052059
- Publication date Feb 17, 2022
- Silicon Storage Technology, Inc.
- Chunming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Making Memory Cells, High Voltage Devices And Logic Devic...
- Publication number 20210398995
- Publication date Dec 23, 2021
- Silicon Storage Technology, Inc.
- Jack Sun
- H01 - BASIC ELECTRIC ELEMENTS

Guo Xiang Song

Person

Patents Grantslast 30 patents

Method of making split-gate non-volatile memory cells with erase ga...

Method of making memory cells, high voltage devices and logic devic...

Method of making memory cells, high voltage devices and logic devic...

Method of forming a device with planar split gate non-volatile memo...

Split-gate non-volatile memory cells with erase gates disposed over...

Split-gate, 2-bit non-volatile memory cell with erase gate disposed...

Patents Applicationslast 30 patents

METHOD OF MAKING SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GA...

SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED...

SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GATES DISPOSED OVER...

METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMO...

Method Of Making Memory Cells, High Voltage Devices And Logic Devic...

Method Of Making Memory Cells, High Voltage Devices And Logic Devic...