Guohan Hu

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 12,190,925
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Low RA narrow base modified double magnetic tunnel junction structure
- Patent number 12,063,868
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Daniel Worledge
Information Patent Grant
MRAM structure with enhanced magnetics using seed engineering
- Patent number 11,972,785
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered magnetic free layer structure containing an ordered ma...
- Patent number 11,557,628
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 11,527,707
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous spin diffusion layer for modified double magnetic tunnel...
- Patent number 11,501,810
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar solenoid inductors with antiferromagnetic pinned cores
- Patent number 11,342,115
- Issue date May 24, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STT MRAM matertails with heavy metal insertion
- Patent number 11,302,863
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure for spin-transfer torque...
- Patent number 11,264,559
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a planar solenoid inductor
- Patent number 11,222,746
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin reference layer for STT MRAM
- Patent number 11,223,010
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure containing an ordered ma...
- Patent number 10,916,581
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low magnetic moment materials for spin transfer torque magnetoresis...
- Patent number 10,833,253
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron segregation in magnetic tunnel junctions
- Patent number 10,804,458
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure for spin-transfer torque...
- Patent number 10,686,123
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a planar, closed loop magnetic structure
- Patent number 10,600,566
- Issue date Mar 24, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic domain wall shift register memory devices with high magnet...
- Patent number 10,580,971
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,553,781
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 10,510,391
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 10,510,390
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified double magnetic tunnel junctions
- Patent number 10,468,455
- Issue date Nov 5, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer with double tunnel barrier...
- Patent number 10,453,509
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,374,145
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin reference layer for STT MRAM
- Patent number 10,361,361
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic anisotropy free layers with iron insertion a...
- Patent number 10,347,827
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer with double tunnel barrier...
- Patent number 10,332,576
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Growth of metal on a dielectric
- Patent number 10,294,561
- Issue date May 21, 2019
- International Business Machines Corporation
- Guohan Hu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabricating a cap layer for a magnetic random access memory (MRAM)...
- Patent number 10,256,399
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron segregation in magnetic tunnel junctions
- Patent number 10,230,043
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double magnetic tunnel junction with dynamic reference layer
- Patent number 10,079,337
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Matthias G. Gottwald
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20250040444
- Publication date Jan 30, 2025
- International Business Machines Corporation
- MATTHIAS GEORG GOTTWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...
- Publication number 20240357942
- Publication date Oct 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS
- Publication number 20240334837
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
Information Patent Application
ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE
- Publication number 20240244982
- Publication date Jul 18, 2024
- International Business Machines Corporation
- Guohan Hu
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING
- Publication number 20230154513
- Publication date May 18, 2023
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20220302368
- Publication date Sep 22, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...
- Publication number 20220301612
- Publication date Sep 22, 2022
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20220123049
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STT MRAM MATERIALS WITH HEAVY METAL INSERTION
- Publication number 20210257540
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...
- Publication number 20210118949
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20200259071
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...
- Publication number 20200251525
- Publication date Aug 6, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20200243749
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20200152699
- Publication date May 14, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...
- Publication number 20200083438
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED DOUBLE MAGNETIC TUNNEL JUNCTIONS
- Publication number 20200066791
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered magnetic free layer structure for spin-transfer torque...
- Publication number 20200058845
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES
- Publication number 20200058440
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES
- Publication number 20190392988
- Publication date Dec 26, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN REFERENCE LAYER FOR STT MRAM
- Publication number 20190288186
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Curre...
- Publication number 20190244647
- Publication date Aug 8, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON SEGREGATION IN MAGNETIC TUNNEL JUNCTIONS
- Publication number 20190140165
- Publication date May 9, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...
- Publication number 20180358067
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...
- Publication number 20180358065
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...
- Publication number 20180358066
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...
- Publication number 20180358068
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
BORON SEGREGATION IN MAGNETIC TUNNEL JUNCTIONS
- Publication number 20180277748
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC ANISOTROPY FREE LAYERS WITH IRON INSERTION A...
- Publication number 20180226576
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Magnetic exchange coupled MTJ free layer having low switching curre...

Low RA narrow base modified double magnetic tunnel junction structure

MRAM structure with enhanced magnetics using seed engineering

Multilayered magnetic free layer structure containing an ordered ma...

In-situ annealing and etch back steps to improve exchange stiffness...

Amorphous spin diffusion layer for modified double magnetic tunnel...

Planar solenoid inductors with antiferromagnetic pinned cores

STT MRAM matertails with heavy metal insertion

Multilayered magnetic free layer structure for spin-transfer torque...

Method for forming a planar solenoid inductor

Thin reference layer for STT MRAM

Multilayered magnetic free layer structure containing an ordered ma...

Low magnetic moment materials for spin transfer torque magnetoresis...

Boron segregation in magnetic tunnel junctions

Multilayered magnetic free layer structure for spin-transfer torque...

Method for forming a planar, closed loop magnetic structure

Magnetic domain wall shift register memory devices with high magnet...

In-situ annealing and etch back steps to improve exchange stiffness...

Magnetic exchange coupled MTJ free layer having low switching curre...

Magnetic exchange coupled MTJ free layer having low switching curre...

Simplified double magnetic tunnel junctions

Magnetic exchange coupled MTJ free layer with double tunnel barrier...

In-situ annealing and etch back steps to improve exchange stiffness...

Thin reference layer for STT MRAM

Perpendicular magnetic anisotropy free layers with iron insertion a...

Magnetic exchange coupled MTJ free layer with double tunnel barrier...

Growth of metal on a dielectric

Fabricating a cap layer for a magnetic random access memory (MRAM)...

Boron segregation in magnetic tunnel junctions

Double magnetic tunnel junction with dynamic reference layer

Patents Applicationslast 30 patents

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMO...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS

ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING

LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE

AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

STT MRAM MATERIALS WITH HEAVY METAL INSERTION

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...

SIMPLIFIED DOUBLE MAGNETIC TUNNEL JUNCTIONS

Multilayered magnetic free layer structure for spin-transfer torque...

PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES

PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES

THIN REFERENCE LAYER FOR STT MRAM

Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Curre...

BORON SEGREGATION IN MAGNETIC TUNNEL JUNCTIONS

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...

BORON SEGREGATION IN MAGNETIC TUNNEL JUNCTIONS

PERPENDICULAR MAGNETIC ANISOTROPY FREE LAYERS WITH IRON INSERTION A...