GuoHao CAO

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 9,653,600
- Issue date May 16, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- GuoHao Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused MOSFET and fabrication method thereof
- Patent number 9,536,742
- Issue date Jan 3, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating same
- Patent number 9,287,397
- Issue date Mar 15, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- GuoHao Cao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20160149035
- Publication date May 26, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- GuoHao CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150364598
- Publication date Dec 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE-SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20140145267
- Publication date May 29, 2014
- GuoHao CAO
- H01 - BASIC ELECTRIC ELEMENTS