GUOLIANG ZHU

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REXFORD, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Gate capping layers of semiconductor devices
- Patent number 11,164,954
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,049,862
- Issue date Jun 29, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple patterning with self-alignment provided by spacers
- Patent number 11,037,821
- Issue date Jun 15, 2021
- GLOBALFOUNDRIES U.S. INC.
- Xiaoming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of the line (MOL) contact formation method and structure
- Patent number 10,347,531
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210118888
- Publication date Apr 22, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CAPPING LAYERS OF SEMICONDUCTOR DEVICES
- Publication number 20200388693
- Publication date Dec 10, 2020
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE PATTERNING WITH SELF-ALIGNMENT PROVIDED BY SPACERS
- Publication number 20200350202
- Publication date Nov 5, 2020
- GLOBALFOUNDRIES INC.
- Xiaoming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF THE LINE (MOL) CONTACT FORMATION METHOD AND STRUCTURE
- Publication number 20180240703
- Publication date Aug 23, 2018
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS