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Shanghai, CN
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Patents Grants
last 30 patents
Information
Patent Grant
Methods for forming single damascene via or trench cavities and for...
Patent number
7,214,609
Issue date
May 8, 2007
Texas Instruments Incorporated
Ping Jiang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dual cap layer in damascene interconnection processes
Patent number
7,129,162
Issue date
Oct 31, 2006
Texas Instruments Incorporated
Hyesook Hong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of patterning a FeRAM capacitor with a sidewall during botto...
Patent number
6,635,498
Issue date
Oct 21, 2003
Texas Instruments Incorporated
Scott R. Summerfelt
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Dual cap layer in damascene interconnection processes
Publication number
20040127016
Publication date
Jul 1, 2004
TEXAS INSTRUMENTS INCORPORATED
Hyesook Hoog
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Methods for forming single damascene via or trench cavities and for...
Publication number
20040110369
Publication date
Jun 10, 2004
Ping Jiang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF PATTERNING A FERAM CAPACITOR WITH A SIDEWALL DURING BOTTO...
Publication number
20030119211
Publication date
Jun 26, 2003
Scott R. Summerfelt
H01 - BASIC ELECTRIC ELEMENTS