Guoqing Chen

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San Diego, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Partial metal fill for preventing extreme-low-k dielectric delamina...
- Patent number 10,194,529
- Issue date Jan 29, 2019
- QUALCOMM Incorporated
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory pr...
- Patent number 9,773,567
- Issue date Sep 26, 2017
- QUALCOMM Incorporated
- Zhongze Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METAL-INSULATOR-SEMICONDUCTOR (MIS) RESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20200328253
- Publication date Oct 15, 2020
- QUALCOMM Incorporated
- Bin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY (RRAM) DEVICES EMPLOYING BOUNDED FIL...
- Publication number 20200328350
- Publication date Oct 15, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL METAL FILL FOR PREVENTING EXTREME-LOW-K DIELECTRIC DELAMINA...
- Publication number 20180082776
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS