Gust Perlegos

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Freemont, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
MOS floating gate memory cell containing tunneling diffusion region...
- Patent number 4,822,750
- Issue date Apr 18, 1989
- Seeq Technology, Inc.
- Gust Perlegos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS floating gate memory cell and process for fabricating same
- Patent number 4,701,776
- Issue date Oct 20, 1987
- Seeq Technology, Inc.
- Gust Perlegos
- H01 - BASIC ELECTRIC ELEMENTS