Guy Feuillet

Person

St Martin D'Uriage, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an optoelectronic device comprising microLEDs
- Patent number 12,080,824
- Issue date Sep 3, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method making it possible to obtain on a crystalline substrate a se...
- Patent number 11,139,167
- Issue date Oct 5, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Michel El Khoury Maroun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semi-polar nitride layer on a crystalline substrate
- Patent number 10,892,378
- Issue date Jan 12, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device with three-dimensional semiconductor elements
- Patent number 10,615,299
- Issue date Apr 7, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Ivan-Christophe Robin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining a semi-polar nitride layer on a crystalline su...
- Patent number 10,553,426
- Issue date Feb 4, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for removing residual extrinsic impurities in an N type ZnO...
- Patent number 8,852,997
- Issue date Oct 7, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Isabelle Bisotto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Assembling two substrates by molecular adhesion
- Patent number 7,906,362
- Issue date Mar 15, 2011
- Commissariat a l'Energie Atomique
- Guy Feuillet
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Asymmetrical semiconductor heterostructure laser cavity and laser e...
- Patent number 5,349,596
- Issue date Sep 20, 1994
- Commissariat a l'Energie Atomique
- Engin Molva
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A III-N MATERIAL-BASED LAYER
- Publication number 20240038532
- Publication date Feb 1, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE MESAS EACH INTENDED TO FORM AN ELECTRO...
- Publication number 20220359479
- Publication date Nov 10, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A NITRIDE LAYER
- Publication number 20220251730
- Publication date Aug 11, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producting an optoelectronic device comprising microleds
- Publication number 20220199853
- Publication date Jun 23, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR OBTAINING A NITRIDE LAYER
- Publication number 20210164126
- Publication date Jun 3, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OPTOELECTRONIC STRUCTURES PROVIDED WITH COP...
- Publication number 20200203556
- Publication date Jun 25, 2020
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD MAKING IT POSSIBLE TO OBTAIN A SEMI-POLAR NITRIDE LAYER ON A...
- Publication number 20190081204
- Publication date Mar 14, 2019
- COMMISSARIA À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING A SEMI-POLAR NITRIDE LAYER ON A CRYSTALLINE SU...
- Publication number 20180330941
- Publication date Nov 15, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTOELECTRONIC DEVICE WITH THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS
- Publication number 20180233610
- Publication date Aug 16, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Ivan-Christophe Robin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD MAKING IT POSSIBLE TO OBTAIN ON A CRYSTALLINE SUBSTRATE A SE...
- Publication number 20180182622
- Publication date Jun 28, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Michel EL KHOURY MAROUN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR REMOVING RESIDUAL EXTRINSIC IMPURITIES IN AN N TYPE ZnO...
- Publication number 20130137214
- Publication date May 30, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Isabelle Bisotto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Preparing P-Type Zinc Oxide ZnO or P-Type ZnMgO
- Publication number 20130122650
- Publication date May 16, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PASIVATING NON-RADIATIVE RECOMBINATION CENTRES OF ZnO SP...
- Publication number 20090311528
- Publication date Dec 17, 2009
- Ivan-Christophe Robin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Assembling Two Substrates by Molecular Adhesion
- Publication number 20080296712
- Publication date Dec 4, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Guy Feuillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Assembling Two Substrates by Molecular Adhesion, One of the Two Sup...
- Publication number 20080041517
- Publication date Feb 21, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Hubert Moriceau
- H01 - BASIC ELECTRIC ELEMENTS

Guy Feuillet

Person

Patents Grantslast 30 patents

Method for producing a nitride layer

Method for producing an optoelectronic device comprising microLEDs

Method making it possible to obtain on a crystalline substrate a se...

Method of making a semi-polar nitride layer on a crystalline substrate

Optoelectronic device with three-dimensional semiconductor elements

Method for obtaining a semi-polar nitride layer on a crystalline su...

Method for removing residual extrinsic impurities in an N type ZnO...

Assembling two substrates by molecular adhesion

Asymmetrical semiconductor heterostructure laser cavity and laser e...

Patents Applicationslast 30 patents

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

METHOD FOR PRODUCING A III-N MATERIAL-BASED LAYER

METHOD FOR PRODUCING NITRIDE MESAS EACH INTENDED TO FORM AN ELECTRO...

METHOD FOR PRODUCING A NITRIDE LAYER

Method for producting an optoelectronic device comprising microleds

PROCESS FOR OBTAINING A NITRIDE LAYER

METHOD OF MANUFACTURING OPTOELECTRONIC STRUCTURES PROVIDED WITH COP...

METHOD MAKING IT POSSIBLE TO OBTAIN A SEMI-POLAR NITRIDE LAYER ON A...

METHOD FOR OBTAINING A SEMI-POLAR NITRIDE LAYER ON A CRYSTALLINE SU...

OPTOELECTRONIC DEVICE WITH THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS

METHOD MAKING IT POSSIBLE TO OBTAIN ON A CRYSTALLINE SUBSTRATE A SE...

METHOD FOR REMOVING RESIDUAL EXTRINSIC IMPURITIES IN AN N TYPE ZnO...

Method For Preparing P-Type Zinc Oxide ZnO or P-Type ZnMgO

METHOD FOR PASIVATING NON-RADIATIVE RECOMBINATION CENTRES OF ZnO SP...

Assembling Two Substrates by Molecular Adhesion

Assembling Two Substrates by Molecular Adhesion, One of the Two Sup...