Gyo-Young JIN

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having capacitors
- Patent number 9,349,724
- Issue date May 24, 2016
- Samsung Electronics Co., Ltd.
- Cheon-bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having buried channel...
- Patent number 9,276,074
- Issue date Mar 1, 2016
- Samsung Electronics Co., Ltd.
- Jay-Bok Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including dual gate electrode structures and...
- Patent number 8,884,340
- Issue date Nov 11, 2014
- Samsung Electronics Co., Ltd.
- Ji-Young Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having vertical channel transistor and methods...
- Patent number 8,785,998
- Issue date Jul 22, 2014
- Samsung Electronics Co., Ltd.
- Hyung-woo Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,492,832
- Issue date Jul 23, 2013
- Samsung Electronics Co., Ltd.
- Ji-young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical channel transistor and methods...
- Patent number 8,362,536
- Issue date Jan 29, 2013
- Samsung Electronics Co., Ltd.
- Hyung-woo Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including contact plug and associated methods
- Patent number 8,264,022
- Issue date Sep 11, 2012
- Samsung Electronics Co., Ltd.
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping polysilicon layer that utilizes gate insulation la...
- Patent number 7,833,864
- Issue date Nov 16, 2010
- Samsung Electronics Co., Ltd.
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having uniform silicide junctions
- Patent number 7,737,512
- Issue date Jun 15, 2010
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having shallow trench isolation structure comp...
- Patent number 7,622,778
- Issue date Nov 24, 2009
- Samsung Electronic Co., Ltd.
- Sung-Sam Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices having contact pads with silicide caps...
- Patent number 7,501,668
- Issue date Mar 10, 2009
- Samung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,465,988
- Issue date Dec 16, 2008
- Samsung Electronics Co., Ltd.
- Sung-Sam Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having uniform silicide junctions
- Patent number 7,329,927
- Issue date Feb 12, 2008
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit devices including a multi-lay...
- Patent number 7,307,008
- Issue date Dec 11, 2007
- Samsung Electronics Co., Ltd.
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a switching f...
- Patent number 7,297,596
- Issue date Nov 20, 2007
- Samsung Electronics Co., Ltd.
- Sung-Sam Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate field effect transistor and method of manufacturing the...
- Patent number 7,288,823
- Issue date Oct 30, 2007
- Samsung Electronics Co., Ltd.
- Jae-Mun Youn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor
- Patent number 7,265,011
- Issue date Sep 4, 2007
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating transistor of DRAM semiconductor device
- Patent number 7,223,649
- Issue date May 29, 2007
- Samsung Electronics Co., Ltd.
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices having extending contact pads and rela...
- Patent number 7,144,798
- Issue date Dec 5, 2006
- Samsung Electronics Co., Ltd.
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming fin field effect transistor
- Patent number 7,056,781
- Issue date Jun 6, 2006
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate field effect transistor and method of manufacturing the...
- Patent number 7,015,106
- Issue date Mar 21, 2006
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating integrated circuit devices having uniform si...
- Patent number 6,974,752
- Issue date Dec 13, 2005
- Samsung Electronics Co., Ltd.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing integrated circuit devices including an i...
- Patent number 6,875,649
- Issue date Apr 5, 2005
- Samsung Electronics Co., Ltd.
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including an isolation region defining a...
- Patent number 6,683,364
- Issue date Jan 27, 2004
- Samsung Electronics Co., Ltd.
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having adjacent P-type doped regions having sha...
- Patent number 6,642,125
- Issue date Nov 4, 2003
- Samsung Electronics Co., Ltd.
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming contact
- Patent number 6,194,309
- Issue date Feb 27, 2001
- Samsung Electronics Co., Ltd.
- Gyo-Young Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING BURIED CHANNEL...
- Publication number 20130288472
- Publication date Oct 31, 2013
- Jay-Bok Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CAPACITORS
- Publication number 20130161787
- Publication date Jun 27, 2013
- Samsung Electronics Co., Ltd.
- Cheon-bae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING PATTERN STRUCTURES AND METHODS OF FORMING CAPACI...
- Publication number 20130140265
- Publication date Jun 6, 2013
- Cheon-Bae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS...
- Publication number 20130113029
- Publication date May 9, 2013
- Samsung Electronics Co., Ltd.
- Hyung-woo Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130037882
- Publication date Feb 14, 2013
- Ji-young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Dual Gate Electrode Structures And...
- Publication number 20120299090
- Publication date Nov 29, 2012
- Ji-Young Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS...
- Publication number 20110284939
- Publication date Nov 24, 2011
- Samsung Electronics Co., Ltd.
- Hyung-woo Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including contact plug and associated methods
- Publication number 20100207241
- Publication date Aug 19, 2010
- Jae-man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080036016
- Publication date Feb 14, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Sam LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Devices Having Uniform Silicide Junctions
- Publication number 20080001235
- Publication date Jan 3, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Se-myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR OF DRAM SEMICONDUCTOR DEVICE
- Publication number 20070190723
- Publication date Aug 16, 2007
- Samsung Electronics Co., Ltd.
- Yong-Chul OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070108516
- Publication date May 17, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Sam LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory devices having contact pads with silicide caps...
- Publication number 20070037375
- Publication date Feb 15, 2007
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION STRUCTURE AND...
- Publication number 20060263991
- Publication date Nov 23, 2006
- Samsung Electronics Co., Ltd.
- Sung-Sam LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate field effect transistor and method of manufacturing the...
- Publication number 20060134868
- Publication date Jun 22, 2006
- Samsung Electronics Co., Ltd.
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices having uniform silicide junctions
- Publication number 20050255653
- Publication date Nov 17, 2005
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming fin field effect transistor
- Publication number 20050153490
- Publication date Jul 14, 2005
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate field effect transistor and method of manufacturing the...
- Publication number 20050056888
- Publication date Mar 17, 2005
- Jae-Man Youn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a transistor
- Publication number 20050048729
- Publication date Mar 3, 2005
- Jae-Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating transistor of DRAM semiconductor device
- Publication number 20050042832
- Publication date Feb 24, 2005
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for manufacturing integrated circuit devices including an i...
- Publication number 20040080019
- Publication date Apr 29, 2004
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices including a multi-layer poly film cell p...
- Publication number 20040036125
- Publication date Feb 26, 2004
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory devices having contact pads with silicide caps...
- Publication number 20040029372
- Publication date Feb 12, 2004
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuits having adjacent P-type doped regions having sha...
- Publication number 20040021197
- Publication date Feb 5, 2004
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating integrated circuit devices having uniform si...
- Publication number 20030214000
- Publication date Nov 20, 2003
- Se-Myeong Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit devices including an isolation region defining a...
- Publication number 20030011044
- Publication date Jan 16, 2003
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuits having adjacent P-type doped regions having sha...
- Publication number 20020070420
- Publication date Jun 13, 2002
- Yong-chul Oh
- H01 - BASIC ELECTRIC ELEMENTS

Gyo-Young JIN

Person

Patents Grantslast 30 patents

Semiconductor device having capacitors

Methods of fabricating semiconductor devices having buried channel...

Semiconductor devices including dual gate electrode structures and...

Semiconductor device having vertical channel transistor and methods...

Semiconductor device

Semiconductor device having vertical channel transistor and methods...

Semiconductor device including contact plug and associated methods

Method of doping polysilicon layer that utilizes gate insulation la...

Integrated circuit devices having uniform silicide junctions

Semiconductor device having shallow trench isolation structure comp...

Semiconductor memory devices having contact pads with silicide caps...

Semiconductor device and method of manufacturing the same

Integrated circuit devices having uniform silicide junctions

Methods of forming integrated circuit devices including a multi-lay...

Method of manufacturing a semiconductor device having a switching f...

Double gate field effect transistor and method of manufacturing the...

Method of manufacturing a transistor

Method of fabricating transistor of DRAM semiconductor device

Semiconductor memory devices having extending contact pads and rela...

Method of forming fin field effect transistor

Double gate field effect transistor and method of manufacturing the...

Methods of fabricating integrated circuit devices having uniform si...

Methods for manufacturing integrated circuit devices including an i...

Integrated circuit devices including an isolation region defining a...

Integrated circuits having adjacent P-type doped regions having sha...

Method for forming contact

Patents Applicationslast 30 patents

METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING BURIED CHANNEL...

SEMICONDUCTOR DEVICE HAVING CAPACITORS

METHODS OF FORMING PATTERN STRUCTURES AND METHODS OF FORMING CAPACI...

SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS...

SEMICONDUCTOR DEVICE

Semiconductor Devices Including Dual Gate Electrode Structures And...

SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS...

Semiconductor device including contact plug and associated methods

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Integrated Circuit Devices Having Uniform Silicide Junctions

METHOD OF FABRICATING TRANSISTOR OF DRAM SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor memory devices having contact pads with silicide caps...

SEMICONDUCTOR DEVICE HAVING SHALLOW TRENCH ISOLATION STRUCTURE AND...

Double gate field effect transistor and method of manufacturing the...

Integrated circuit devices having uniform silicide junctions

Method of forming fin field effect transistor

Double gate field effect transistor and method of manufacturing the...

Method of manufacturing a transistor

Method of fabricating transistor of DRAM semiconductor device

Methods for manufacturing integrated circuit devices including an i...

Integrated circuit devices including a multi-layer poly film cell p...

Semiconductor memory devices having contact pads with silicide caps...

Integrated circuits having adjacent P-type doped regions having sha...

Methods of fabricating integrated circuit devices having uniform si...

Integrated circuit devices including an isolation region defining a...

Integrated circuits having adjacent P-type doped regions having sha...