Hag-Ju Cho

Person

Hwansung-city, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device including field isolation layer and metho...
- Patent number 11,024,631
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Won Cheol Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having dual gate
- Patent number 9,236,313
- Issue date Jan 12, 2016
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having dual gate
- Patent number 8,932,922
- Issue date Jan 13, 2015
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gate
- Patent number 8,748,239
- Issue date Jun 10, 2014
- Samsung Electronics Co., Ltd.
- Jong-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using an etchant
- Patent number 8,557,651
- Issue date Oct 15, 2013
- Samsung Electronics Co., Ltd.
- Hyo-San Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,524,554
- Issue date Sep 3, 2013
- IMEC
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate and method of manufacturing semiconducto...
- Patent number 8,501,550
- Issue date Aug 6, 2013
- Samsung Electronics Co., Ltd.
- Jong-Pil Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing dual gate semiconductor device
- Patent number 8,367,502
- Issue date Feb 5, 2013
- Samsung Electronics Co., Ltd.
- Hong-bae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,313,993
- Issue date Nov 20, 2012
- IMEC
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices having gates with differen...
- Patent number 8,293,599
- Issue date Oct 23, 2012
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with improved immunity to erase saturati...
- Patent number 8,119,511
- Issue date Feb 21, 2012
- IMEC
- Bogdan Govoreanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having dual gate
- Patent number 7,972,950
- Issue date Jul 5, 2011
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having transistors wit...
- Patent number 7,892,958
- Issue date Feb 22, 2011
- Samsung Electronics Co., Ltd.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with dual gates
- Patent number 7,727,841
- Issue date Jun 1, 2010
- Samsung Electronics Co., Ltd.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having transistors with different gate struct...
- Patent number 7,531,881
- Issue date May 12, 2009
- Samsung Electronics Co., Ltd.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a composite dielectric structure and methods of...
- Patent number 7,507,652
- Issue date Mar 24, 2009
- Samsung Electronics Co., Ltd.
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate patterns and related method...
- Patent number 7,494,859
- Issue date Feb 24, 2009
- Samsung Electronics Co., Ltd.
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming different gate structures in NMOS and PMOS regio...
- Patent number 7,399,670
- Issue date Jul 15, 2008
- Samsung Electronics Co., Ltd.
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a dual gate s...
- Patent number 7,390,719
- Issue date Jun 24, 2008
- Samsung Electronics, Co., Ltd.
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having dielectric regions protected with...
- Patent number 7,023,037
- Issue date Apr 4, 2006
- Samsung Electronics Co., Ltd.
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A...
- Patent number 6,821,862
- Issue date Nov 23, 2004
- Samsung Electronics Co., Ltd.
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated circuit devices having dielectric...
- Patent number 6,740,531
- Issue date May 25, 2004
- Samsung Electronics Co., Ltd.
- Hag-ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having capacitor protection layer and m...
- Patent number 6,509,601
- Issue date Jan 21, 2003
- Samsung Electronics Co., Ltd.
- Yong-tak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit capacitors having plasma trea...
- Patent number 6,096,592
- Issue date Aug 1, 2000
- Samsung Electronics Co., Ltd.
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit capacitors using metal reflow...
- Patent number 6,001,660
- Issue date Dec 14, 1999
- Samsung Electronics Co., Ltd.
- Young-soh Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230402382
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Jin Kyu KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING FIELD ISOLATION LAYER AND METHO...
- Publication number 20200227421
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- WON CHEOL JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING SHALLOW TRENCH ISOLATION (STI) LINERS
- Publication number 20160276342
- Publication date Sep 22, 2016
- Samsung Electronics Co., Ltd.
- Sun-Me LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE
- Publication number 20150093888
- Publication date Apr 2, 2015
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GATE
- Publication number 20130316514
- Publication date Nov 28, 2013
- Samsung Electronics Co., Ltd.
- Jong-Pil KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20130052815
- Publication date Feb 28, 2013
- IMEC
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Semiconductor Devices Having Gate Trenches
- Publication number 20120238067
- Publication date Sep 20, 2012
- Won-Cheol Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING GATE AND METHOD OF MANUFACTURING SEMICONDUCTO...
- Publication number 20120115298
- Publication date May 10, 2012
- Jong-Pil KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE
- Publication number 20110223758
- Publication date Sep 15, 2011
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING AN ETCHANT
- Publication number 20110217833
- Publication date Sep 8, 2011
- Hyo-San Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Device with Improved Immunity to Erase Saturati...
- Publication number 20110183509
- Publication date Jul 28, 2011
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Bogdan Govoreanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE
- Publication number 20100203716
- Publication date Aug 12, 2010
- Samsung Electronics Co., Ltd.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DUAL GATES AND METHOD OF MANUFACTURING TH...
- Publication number 20100193875
- Publication date Aug 5, 2010
- Samsung Electronics Co., Ltd.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing dual gate semiconductor device
- Publication number 20100164009
- Publication date Jul 1, 2010
- Samsung Electronics, Ltd.
- Hong-bae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFEREN...
- Publication number 20100124805
- Publication date May 20, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Hoon-joo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING TRANSISTORS WIT...
- Publication number 20090253256
- Publication date Oct 8, 2009
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090184376
- Publication date Jul 23, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURIN...
- Publication number 20090134466
- Publication date May 28, 2009
- Interuniversitair Mcroelektronica Centrum vzw(IMEC)
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Memory Device with Improved Immunity to Erase Saturati...
- Publication number 20090134453
- Publication date May 28, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Bogdan Govoreanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Fabricating the Same
- Publication number 20080023765
- Publication date Jan 31, 2008
- SAMSUNG ELECTRONICS COMPANY, LTD.
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing A Semiconductor Device for Improving the E...
- Publication number 20070166931
- Publication date Jul 19, 2007
- Hong-Bae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a tungsten ca...
- Publication number 20070128775
- Publication date Jun 7, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with dual gates and method of manufacturing th...
- Publication number 20070111453
- Publication date May 17, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device having a dual gate s...
- Publication number 20070082415
- Publication date Apr 12, 2007
- Taek-Soo Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a tantalum carbon nitride layer and method of man...
- Publication number 20070059929
- Publication date Mar 15, 2007
- Hag-Ju Cho
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Gate electrode structure and method of forming the same, and semico...
- Publication number 20070026596
- Publication date Feb 1, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor devices and methods of manufacturing the...
- Publication number 20070026621
- Publication date Feb 1, 2007
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having transistors with different gate struct...
- Publication number 20060273344
- Publication date Dec 7, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having metal gate patterns and related method...
- Publication number 20060226470
- Publication date Oct 12, 2006
- Hag-Ju Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a composite layer, method of manufacturing a gate...
- Publication number 20060189055
- Publication date Aug 24, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Hong-Bae Park
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Integrated circuit device including field isolation layer and metho...

Method of fabricating semiconductor device having dual gate

Method of fabricating semiconductor device having dual gate

Method of fabricating a gate

Method of manufacturing a semiconductor device using an etchant

Semiconductor device and method for fabricating the same

Method of fabricating gate and method of manufacturing semiconducto...

Method of manufacturing dual gate semiconductor device

Semiconductor device and method for fabricating the same

Methods of forming semiconductor devices having gates with differen...

Non-volatile memory device with improved immunity to erase saturati...

Method of fabricating semiconductor device having dual gate

Methods of fabricating semiconductor devices having transistors wit...

Method of manufacturing semiconductor device with dual gates

Semiconductor devices having transistors with different gate struct...

Methods of forming a composite dielectric structure and methods of...

Semiconductor device having metal gate patterns and related method...

Methods of forming different gate structures in NMOS and PMOS regio...

Method of manufacturing a semiconductor device having a dual gate s...

Integrated circuit devices having dielectric regions protected with...

METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A...

Method of fabricating integrated circuit devices having dielectric...

Semiconductor memory device having capacitor protection layer and m...

Methods of forming integrated circuit capacitors having plasma trea...

Methods of forming integrated circuit capacitors using metal reflow...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICE INCLUDING FIELD ISOLATION LAYER AND METHO...

SEMICONDUCTOR DEVICES INCLUDING SHALLOW TRENCH ISOLATION (STI) LINERS

METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE

METHOD OF FABRICATING A GATE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Methods of Fabricating Semiconductor Devices Having Gate Trenches

METHOD OF FABRICATING GATE AND METHOD OF MANUFACTURING SEMICONDUCTO...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING AN ETCHANT

Non-Volatile Memory Device with Improved Immunity to Erase Saturati...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE

SEMICONDUCTOR DEVICE WITH DUAL GATES AND METHOD OF MANUFACTURING TH...

Method of manufacturing dual gate semiconductor device

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFEREN...

METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING TRANSISTORS WIT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURIN...

Non-Volatile Memory Device with Improved Immunity to Erase Saturati...

Semiconductor Devices and Methods of Fabricating the Same

Methods of Manufacturing A Semiconductor Device for Improving the E...

Method of manufacturing a semiconductor device having a tungsten ca...

Semiconductor device with dual gates and method of manufacturing th...

Method of manufacturing a semiconductor device having a dual gate s...

Method of forming a tantalum carbon nitride layer and method of man...

Gate electrode structure and method of forming the same, and semico...

Non-volatile semiconductor devices and methods of manufacturing the...

Semiconductor devices having transistors with different gate struct...

Semiconductor device having metal gate patterns and related method...

Method of forming a composite layer, method of manufacturing a gate...