Hai-Dang Trinh

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 12,364,171
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
FeRAM with laminated ferroelectric film and method forming same
- Patent number 12,356,631
- Issue date Jul 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bi-Shen Lee
Information Patent Grant
Interface film to mitigate size effect of memory device
- Patent number 12,349,366
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Remote plasma ultraviolet enhanced deposition
- Patent number 12,334,317
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,310,036
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM device with improved performance
- Patent number 12,295,270
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,295,267
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Bi-Shen Lee
Information Patent Grant
Diffusion barrier layer in top electrode to increase break down vol...
- Patent number 12,261,197
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 12,245,529
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 12,239,035
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-doped data storage structure configured to improve resistive...
- Patent number 12,232,434
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,225,834
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,178,147
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
Information Patent Grant
Wakeup free approach to improve the ferroelectricity of FeRAM using...
- Patent number 12,160,995
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Ferroelectric memory device and method of manufacturing the same
- Patent number 12,137,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structure along image sensor element to mitigate damage to...
- Patent number 12,132,066
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Kai Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped sidewall spacer/etch stop layer for memory
- Patent number 12,127,483
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 12,102,019
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Image sensor having stacked metal oxide films as fixed charge film
- Patent number 12,080,738
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 12,075,626
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,075,636
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching layer scheme to enhance RRAM performance
- Patent number 12,069,971
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Interface film to mitigate size effect of memory device
- Patent number 12,035,537
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,991,937
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
Information Patent Grant
Multilayer structure, capacitor structure and electronic device
- Patent number 11,967,611
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Rram structure
- Patent number 11,963,468
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,895,933
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE WITH IMPROVED PERFORMANCE
- Publication number 20250241211
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250234790
- Publication date Jul 17, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- BI-SHEN LEE
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250228146
- Publication date Jul 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...
- Publication number 20250194121
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20250176447
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...
- Publication number 20250151635
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250081864
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
Information Patent Application
WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...
- Publication number 20250048645
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
CAPACITOR STRUCTURE INCLUDING WORK FUNCTION METAL LAYERS AND METHOD...
- Publication number 20250014984
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240387578
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIH-YU LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240381663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Memory Device and Method of Manufacturing the Same
- Publication number 20240381664
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE
- Publication number 20240381793
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
CAPPING STRUCTURE ALONG IMAGE SENSOR ELEMENT TO MITIGATE DAMAGE TO...
- Publication number 20240371907
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Kai Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY
- Publication number 20240373760
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
Information Patent Application
IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20240357835
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM STRUCTURE
- Publication number 20240224822
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20240138272
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
PHASE CHANGE MATERIAL (PCM) SWITCH HAVING LOW HEATER RESISTANCE
- Publication number 20240099022
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240074217
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
FeRAM with Laminated Ferroelectric Film and Method Forming Same
- Publication number 20240064998
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...
- Publication number 20240021700
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
- Publication number 20240023344
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM CAPACITOR AND METHOD OF FORMING THE SAME
- Publication number 20230420493
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20230413696
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF
- Publication number 20230402487
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE
- Publication number 20230387190
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT
- Publication number 20230389453
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh

Hai-Dang Trinh

Person

Patents Grantslast 30 patents

Resistive memory cell with switching layer comprising one or more d...

FeRAM with laminated ferroelectric film and method forming same

Interface film to mitigate size effect of memory device

Remote plasma ultraviolet enhanced deposition

Threshold voltage-modulated memory device using variable-capacitanc...

RRAM device with improved performance

Semiconductor device and method of manufacturing the same

Diffusion barrier layer in top electrode to increase break down vol...

Diffusion barrier layer in programmable metallization cell

Resistive memory cell having a low forming voltage

Threshold voltage-modulated memory device using variable-capacitanc...

Multi-doped data storage structure configured to improve resistive...

Method for forming semiconductor structure

Semiconductor device and method for manufacturing the same

Wakeup free approach to improve the ferroelectricity of FeRAM using...

Ferroelectric memory device and method of manufacturing the same

Capping structure along image sensor element to mitigate damage to...

Doped sidewall spacer/etch stop layer for memory

Data storage structure for improving memory cell reliability

Image sensor having stacked metal oxide films as fixed charge film

Memory window of MFM MOSFET for small cell size

Threshold voltage-modulated memory device using variable-capacitanc...

Switching layer scheme to enhance RRAM performance

Interface film to mitigate size effect of memory device

Semiconductor device and method for manufacturing the same

Multilayer structure, capacitor structure and electronic device

Circuit design and layout with high embedded memory density

Rram structure

Multi-layer electrode to improve performance of ferroelectric memor...

Resistive memory cell with switching layer comprising one or more d...

Patents Applicationslast 30 patents

MEMORY DEVICE WITH IMPROVED PERFORMANCE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE, MEMORY STRUCTURE AND METHOD OF FORMING THE SAME

DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

WAKEUP FREE APPROACH TO IMPROVE THE FERROELECTRICITY OF FERAM USING...

CAPACITOR STRUCTURE INCLUDING WORK FUNCTION METAL LAYERS AND METHOD...

IMAGE SENSOR DEVICE AND METHOD OF FABRICATING THE SAME

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

Ferroelectric Memory Device and Method of Manufacturing the Same

OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE

CAPPING STRUCTURE ALONG IMAGE SENSOR ELEMENT TO MITIGATE DAMAGE TO...

DOPED SIDEWALL SPACER/ETCH STOP LAYER FOR MEMORY

IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

RRAM STRUCTURE

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

PHASE CHANGE MATERIAL (PCM) SWITCH HAVING LOW HEATER RESISTANCE

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

FeRAM with Laminated Ferroelectric Film and Method Forming Same

MULTI-LAYER ELECTRODE TO IMPROVE PERFORMANCE OF FERROELECTRIC MEMOR...

INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE

MIM CAPACITOR AND METHOD OF FORMING THE SAME

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF

MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT