Hai LU

Person

Nanjing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
GaN HEMT transistor with impact energy release capability for use i...
- Patent number 12,300,746
- Issue date May 13, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor structure for irradiation characteristic...
- Patent number 12,295,154
- Issue date May 6, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN HEMT device for irradiation damage detection and detection and...
- Patent number 12,287,360
- Issue date Apr 29, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ testing system for semiconductor device in aerospace irradi...
- Patent number 12,146,908
- Issue date Nov 19, 2024
- Nanjing University
- Feng Zhou
- G01 - MEASURING TESTING
Information Patent Grant
Silicon carbide-based lateral PN junction extreme ultraviolet detec...
- Patent number 12,080,821
- Issue date Sep 3, 2024
- Nanjing University
- Hai Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESET-TYPE CHARGE-SENSITIVE AMPLIFYING CIRCUIT, AND METHOD FOR AMPL...
- Publication number 20250237772
- Publication date Jul 24, 2025
- Nanjing University
- Weizong XU
- G01 - MEASURING TESTING
Information Patent Application
IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION C...
- Publication number 20250169162
- Publication date May 22, 2025
- Nanjing University
- FENG ZHOU
Information Patent Application
GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE I...
- Publication number 20250126824
- Publication date Apr 17, 2025
- Nanjing University
- FENG ZHOU
Information Patent Application
Electrical-thermal-hydrogen Multi-Energy Device Planning Method for...
- Publication number 20250077729
- Publication date Mar 6, 2025
- SOUTHEAST UNIVERSITY
- Zhi WU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Incomplete Dimensionality Augmentation-Based Optimization Method fo...
- Publication number 20240405571
- Publication date Dec 5, 2024
- Yunnan Power Grid Co., Ltd. Electric Power Research Institute
- Enbo LUO
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD FOR CONSTRUCTING SECURITY REGION OF INTEGRATED ELECTRICITY A...
- Publication number 20240303391
- Publication date Sep 12, 2024
- SOUTHEAST UNIVERSITY
- Wei GU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...
- Publication number 20240204126
- Publication date Jun 20, 2024
- Nanjing University
- Hai LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CALCULATING OPTIMAL ENERGY FLOW OF INTEGRATED ELECTRICIT...
- Publication number 20230369852
- Publication date Nov 16, 2023
- SOUTHEAST UNIVERSITY
- Pengxiang LIU
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Person

Patents Grantslast 30 patents

GaN HEMT transistor with impact energy release capability for use i...

Wide bandgap semiconductor structure for irradiation characteristic...

GaN HEMT device for irradiation damage detection and detection and...

In-situ testing system for semiconductor device in aerospace irradi...

Silicon carbide-based lateral PN junction extreme ultraviolet detec...

Patents Applicationslast 30 patents

RESET-TYPE CHARGE-SENSITIVE AMPLIFYING CIRCUIT, AND METHOD FOR AMPL...

IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION C...

GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE I...

Electrical-thermal-hydrogen Multi-Energy Device Planning Method for...

Incomplete Dimensionality Augmentation-Based Optimization Method fo...

METHOD FOR CONSTRUCTING SECURITY REGION OF INTEGRATED ELECTRICITY A...

NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...

METHOD FOR CALCULATING OPTIMAL ENERGY FLOW OF INTEGRATED ELECTRICIT...