Haichun Yang

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for the treatment of workpieces
- Patent number 11,791,181
- Issue date Oct 17, 2023
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Ting Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch process using hydrofluoric acid and ozone gases
- Patent number 11,791,166
- Issue date Oct 17, 2023
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing of workpieces using ozone gas and hydrogen radicals
- Patent number 11,315,801
- Issue date Apr 26, 2022
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxide selective dry etch process
- Patent number 11,251,050
- Issue date Feb 15, 2022
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch process using hydrofluoric acid and ozone gases
- Patent number 11,183,397
- Issue date Nov 23, 2021
- BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing of workpieces using hydrogen radicals and ozone gas
- Patent number 11,164,727
- Issue date Nov 2, 2021
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Ting Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxide selective dry etch process
- Patent number 10,692,730
- Issue date Jun 23, 2020
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment method for preventing defects in doped silicon oxi...
- Patent number 8,318,605
- Issue date Nov 27, 2012
- Applied Materials, Inc.
- Chien-Teh Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching of silicon nitride
- Patent number 8,252,696
- Issue date Aug 28, 2012
- Applied Materials, Inc.
- Xinliang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor deposition processes for tantalum carbide nitride materials
- Patent number 7,989,339
- Issue date Aug 2, 2011
- Applied Materials, Inc.
- Kavita Shah
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Thermal annealing method for preventing defects in doped silicon ox...
- Patent number 7,977,246
- Issue date Jul 12, 2011
- Applied Materials, Inc.
- Haichun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for forming at least one dielectric layer
- Patent number 7,871,926
- Issue date Jan 18, 2011
- Applied Materials, Inc.
- Li-Qun Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer formation by plasma clean process to reduce nativ...
- Patent number 7,780,793
- Issue date Aug 24, 2010
- Applied Materials, Inc.
- Haichun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum carbide nitride materials by vapor deposition processes
- Patent number 7,678,298
- Issue date Mar 16, 2010
- Applied Materials, Inc.
- Kavita Shah
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor deposition processes for tantalum carbide nitride materials
- Patent number 7,585,762
- Issue date Sep 8, 2009
- Applied Materials, Inc.
- Kavita Shah
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Workpiece Processing Apparatus and Methods for the Treatment of Wor...
- Publication number 20240404797
- Publication date Dec 5, 2024
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Ting Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PROCESSING WORKPIECES USING ORGANIC RADICALS
- Publication number 20240165659
- Publication date May 23, 2024
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Ting Xie
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
Selective Etch Process Using Hydrofluoric Acid and Ozone Gases
- Publication number 20220084839
- Publication date Mar 17, 2022
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing of Workpieces Using Ozone Gas and Hydrogen Radicals
- Publication number 20210366727
- Publication date Nov 25, 2021
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods And Apparatus For Pulsed Inductively Coupled Plasma For Sur...
- Publication number 20210343506
- Publication date Nov 4, 2021
- Mattson Technology, Inc.
- Ting Xie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Selective Etch Process Using Hydrofluoric Acid and Ozone Gases
- Publication number 20210118694
- Publication date Apr 22, 2021
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR THE TREATMENT OF WORKPIECES
- Publication number 20210082724
- Publication date Mar 18, 2021
- Mattson Technology, Inc.
- Ting Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Oxide Selective Dry Etch Process
- Publication number 20210066088
- Publication date Mar 4, 2021
- Mattson Technology, Inc.
- Qi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING OF WORKPIECES USING HYDROGEN RADICALS AND OZONE GAS
- Publication number 20210020413
- Publication date Jan 21, 2021
- Mattson Technology, Inc.
- Ting Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAMLESS GAP-FILL WITH SPATIAL ATOMIC LAYER DEPOSITION
- Publication number 20150255324
- Publication date Sep 10, 2015
- Applied Materials, Inc.
- Ning LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vapor Deposition Processes for Tantalum Carbide Nitride Materials
- Publication number 20100129535
- Publication date May 27, 2010
- Applied Materials, Inc.
- KAVITA SHAH
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG...
- Publication number 20100099263
- Publication date Apr 22, 2010
- Applied Materials, Inc.
- Chien-Teh Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OX...
- Publication number 20090269930
- Publication date Oct 29, 2009
- Applied Materials, Inc.
- Haichun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXI...
- Publication number 20090269934
- Publication date Oct 29, 2009
- Applied Materials, Inc.
- Chien-Teh Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS WITH SATURATION AT LOW ETCH AMOUNT FOR HIGH CONTACT BOTTOM...
- Publication number 20090191703
- Publication date Jul 30, 2009
- APPLIED MATERIALS, INC.
- Xinliang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Systems for Forming at Least One Dielectric Layer
- Publication number 20090104764
- Publication date Apr 23, 2009
- Applied Materials, Inc.
- Li-Qun Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCHING OF SILICON NITRIDE
- Publication number 20090104782
- Publication date Apr 23, 2009
- Applied Materials, Inc.
- XINLAING LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES
- Publication number 20090078916
- Publication date Mar 26, 2009
- APPLIED MATERIALS, INC.
- KAVITA SHAH
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS
- Publication number 20090081868
- Publication date Mar 26, 2009
- APPLIED MATERIALS, INC.
- KAVITA SHAH
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIV...
- Publication number 20080160210
- Publication date Jul 3, 2008
- Haichun Yang
- H01 - BASIC ELECTRIC ELEMENTS

Haichun Yang

Person

Patents Grantslast 30 patents

Methods for the treatment of workpieces

Selective etch process using hydrofluoric acid and ozone gases

Processing of workpieces using ozone gas and hydrogen radicals

Silicon oxide selective dry etch process

Selective etch process using hydrofluoric acid and ozone gases

Processing of workpieces using hydrogen radicals and ozone gas

Silicon oxide selective dry etch process

Plasma treatment method for preventing defects in doped silicon oxi...

Selective etching of silicon nitride

Vapor deposition processes for tantalum carbide nitride materials

Thermal annealing method for preventing defects in doped silicon ox...

Methods and systems for forming at least one dielectric layer

Passivation layer formation by plasma clean process to reduce nativ...

Tantalum carbide nitride materials by vapor deposition processes

Vapor deposition processes for tantalum carbide nitride materials

Patents Applicationslast 30 patents

Workpiece Processing Apparatus and Methods for the Treatment of Wor...

METHODS OF PROCESSING WORKPIECES USING ORGANIC RADICALS

Selective Etch Process Using Hydrofluoric Acid and Ozone Gases

Processing of Workpieces Using Ozone Gas and Hydrogen Radicals

Methods And Apparatus For Pulsed Inductively Coupled Plasma For Sur...

Selective Etch Process Using Hydrofluoric Acid and Ozone Gases

METHODS FOR THE TREATMENT OF WORKPIECES

Silicon Oxide Selective Dry Etch Process

PROCESSING OF WORKPIECES USING HYDROGEN RADICALS AND OZONE GAS

SEAMLESS GAP-FILL WITH SPATIAL ATOMIC LAYER DEPOSITION

Vapor Deposition Processes for Tantalum Carbide Nitride Materials

NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG...

THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OX...

PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXI...

PROCESS WITH SATURATION AT LOW ETCH AMOUNT FOR HIGH CONTACT BOTTOM...

Methods and Systems for Forming at Least One Dielectric Layer

SELECTIVE ETCHING OF SILICON NITRIDE

TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES

VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS

PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIV...