Haifeng Sheng

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming semiconductor material in trenches having differe...
- Patent number 10,714,376
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Siloxane and organic-based MOL contact patterning
- Patent number 10,056,458
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Chang Ho Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact etch stop layer with sacrificial polysilicon layer
- Patent number 9,991,363
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for nitride planarization using dielectric
- Patent number 9,966,272
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Haifeng Sheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride CESL removal without gate cap height loss and resul...
- Patent number 9,905,472
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming SADP on SRAM and SAQP on logic
- Patent number 9,761,452
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned lithographic patterning with variable spacings
- Patent number 9,711,447
- Issue date Jul 18, 2017
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers on FinFET devices
- Patent number 9,673,301
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Fuad Al-Amoody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming self-aligned contacts on FinFET devices
- Patent number 9,627,274
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Haifeng Sheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a conductive interconnect arrangement for a s...
- Patent number 8,183,149
- Issue date May 22, 2012
- GLOBALFOUNDRIES Inc.
- David M. Permana
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...
- Publication number 20190393077
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20180350607
- Publication date Dec 6, 2018
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE
- Publication number 20180108732
- Publication date Apr 19, 2018
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING SADP ON SRAM AND SAQP ON LOGIC
- Publication number 20180012760
- Publication date Jan 11, 2018
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
- Publication number 20170200792
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Chang Ho MAENG
- H01 - BASIC ELECTRIC ELEMENTS

Haifeng Sheng

Person

Patents Grantslast 30 patents

Method of forming semiconductor material in trenches having differe...

Siloxane and organic-based MOL contact patterning

Contact etch stop layer with sacrificial polysilicon layer

Methods for nitride planarization using dielectric

Silicon nitride CESL removal without gate cap height loss and resul...

Devices and methods of forming SADP on SRAM and SAQP on logic

Self-aligned lithographic patterning with variable spacings

Methods of forming spacers on FinFET devices

Methods of forming self-aligned contacts on FinFET devices

Method of fabricating a conductive interconnect arrangement for a s...

Patents Applicationslast 30 patents

METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...

SEMICONDUCTOR STRUCTURE

NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE

DEVICES AND METHODS OF FORMING SADP ON SRAM AND SAQP ON LOGIC

SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING