Haining Yang

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET semiconductor device
- Patent number 12,206,001
- Issue date Jan 21, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a...
- Patent number 12,068,238
- Issue date Aug 20, 2024
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional (3D) vertical spiral inductor and transformer
- Patent number 12,051,534
- Issue date Jul 30, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor having a source/drain contact with a single inner spacer
- Patent number 11,901,434
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact isolation in a semiconductor
- Patent number 11,901,427
- Issue date Feb 13, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor (FinFET) static random access memory (S...
- Patent number 11,744,059
- Issue date Aug 29, 2023
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Artificial neural networks with precision weight for artificial int...
- Patent number 11,687,766
- Issue date Jun 27, 2023
- QUALCOMM Incorporated
- Haining Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...
- Patent number 11,545,483
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated device comprising transistor coupled to a dummy gate con...
- Patent number 11,404,414
- Issue date Aug 2, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device implemented with buried rails
- Patent number 11,393,819
- Issue date Jul 19, 2022
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device channel profile structure
- Patent number 11,335,683
- Issue date May 17, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary cell circuits employing isolation structures for defe...
- Patent number 11,295,991
- Issue date Apr 5, 2022
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with high charge mobility channel mater...
- Patent number 11,222,952
- Issue date Jan 11, 2022
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with insulator
- Patent number 11,164,952
- Issue date Nov 2, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with low parasitic capacitance
- Patent number 11,145,649
- Issue date Oct 12, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistor
- Patent number 11,139,315
- Issue date Oct 5, 2021
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-cut isolation structure and fabrication method
- Patent number 11,121,132
- Issue date Sep 14, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break local interconnect
- Patent number 11,056,487
- Issue date Jul 6, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shunt power rail with short line effect
- Patent number 11,038,344
- Issue date Jun 15, 2021
- QUALCOMM Incorporated
- John Jianhong Zhu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Circuits employing adjacent low-k dummy gate to a field-effect tran...
- Patent number 11,011,602
- Issue date May 18, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) and fin field-effect transistor (FinFet) hybr...
- Patent number 10,950,609
- Issue date Mar 16, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits employing a double diffusion break (DDB) and single diffus...
- Patent number 10,892,322
- Issue date Jan 12, 2021
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset gate contact
- Patent number 10,854,604
- Issue date Dec 1, 2020
- QUALCOMM Incorporated
- ChihWei Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Contact for semiconductor device
- Patent number 10,833,017
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable circuits for performing machine learning operations on...
- Patent number 10,825,536
- Issue date Nov 3, 2020
- QUALCOMM Incorporated
- Haining Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuits employing asymmetric diffusion breaks in different type se...
- Patent number 10,679,994
- Issue date Jun 9, 2020
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits employing a double diffusion break (DDB) and single diffus...
- Patent number 10,622,479
- Issue date Apr 14, 2020
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits employing a double diffusion break (DDB) and single diffus...
- Patent number 10,573,748
- Issue date Feb 25, 2020
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits (ICs) employing additional output vertical inte...
- Patent number 10,483,200
- Issue date Nov 19, 2019
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) employing a channel structure layout having...
- Patent number 10,431,686
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...
- Publication number 20240421157
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT N/P LOCAL INTERCONNECT
- Publication number 20240404872
- Publication date Dec 5, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...
- Publication number 20240363690
- Publication date Oct 31, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE CONTACT ON SOURCE AND DRAIN
- Publication number 20240321965
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...
- Publication number 20240321861
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS
- Publication number 20240321860
- Publication date Sep 26, 2024
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...
- Publication number 20240297218
- Publication date Sep 5, 2024
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SMALL CONTACT STRUCTURE
- Publication number 20240266217
- Publication date Aug 8, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE C...
- Publication number 20240243131
- Publication date Jul 18, 2024
- QUALCOMM Incorporated
- Ming-Huei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
- Publication number 20240234418
- Publication date Jul 11, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
- Publication number 20240136357
- Publication date Apr 25, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS AND STANDARD CELL
- Publication number 20240105728
- Publication date Mar 28, 2024
- QUALCOMM Incorporated
- Qingqing LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS
- Publication number 20240105797
- Publication date Mar 28, 2024
- QUALCOMM Incorporated
- Qingqing LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
- Publication number 20240096698
- Publication date Mar 21, 2024
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...
- Publication number 20230009977
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER
- Publication number 20220352347
- Publication date Nov 3, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT ISOLATION IN A SEMICONDUCTOR
- Publication number 20220336608
- Publication date Oct 20, 2022
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE (BEOL) HIGH RESISTANCE (HI-R) CONDUCTOR LAYER IN A...
- Publication number 20220336346
- Publication date Oct 20, 2022
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) VERTICAL SPIRAL INDUCTOR AND TRANSFORMER
- Publication number 20220328237
- Publication date Oct 13, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DECOUPLING METAL-INSULATOR-METAL CAPACITOR
- Publication number 20220293513
- Publication date Sep 15, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE FIELD EFFECT TRANSISTOR (PFET) ON A SILICON GERMANIUM (GE) B...
- Publication number 20220271162
- Publication date Aug 25, 2022
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVE DAMASCENE FORMATION OF HYBRID INTERCONNECTIONS
- Publication number 20220262723
- Publication date Aug 18, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOW RESISTANCE BURIED POWER RAIL THROUGH SINGLE DIFFUS...
- Publication number 20220173039
- Publication date Jun 2, 2022
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL-INSULATOR-METAL CAPACITOR
- Publication number 20220123101
- Publication date Apr 21, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDE BACK-END-OF-LINE METALLIZATION FOR PSEUDO THROUGH-SILIC...
- Publication number 20220020665
- Publication date Jan 20, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE IMPLEMENTED WITH BURIED RAILS
- Publication number 20220013522
- Publication date Jan 13, 2022
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE CHANNEL PROFILE STRUCTURE
- Publication number 20210407998
- Publication date Dec 30, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...
- Publication number 20210398972
- Publication date Dec 23, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTOR WITH INSULATOR ON SUBSTRATE AND ME...
- Publication number 20210384227
- Publication date Dec 9, 2021
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS

Haining Yang

Person

Patents Grantslast 30 patents

FinFET semiconductor device

Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a...

Three dimensional (3D) vertical spiral inductor and transformer

Semiconductor having a source/drain contact with a single inner spacer

Gate contact isolation in a semiconductor

Fin field-effect transistor (FinFET) static random access memory (S...

Artificial neural networks with precision weight for artificial int...

Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...

Integrated device comprising transistor coupled to a dummy gate con...

Semiconductor device implemented with buried rails

Device channel profile structure

Complementary cell circuits employing isolation structures for defe...

Gate all around transistors with high charge mobility channel mater...

Transistor with insulator

Semiconductor devices with low parasitic capacitance

Ferroelectric transistor

Gate-cut isolation structure and fabrication method

Single diffusion break local interconnect

Shunt power rail with short line effect

Circuits employing adjacent low-k dummy gate to a field-effect tran...

Gate-all-around (GAA) and fin field-effect transistor (FinFet) hybr...

Circuits employing a double diffusion break (DDB) and single diffus...

Offset gate contact

Contact for semiconductor device

Programmable circuits for performing machine learning operations on...

Circuits employing asymmetric diffusion breaks in different type se...

Circuits employing a double diffusion break (DDB) and single diffus...

Circuits employing a double diffusion break (DDB) and single diffus...

Integrated circuits (ICs) employing additional output vertical inte...

Integrated circuit (IC) employing a channel structure layout having...

Patents Applicationslast 30 patents

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CU...

DIRECT N/P LOCAL INTERCONNECT

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE EMPLOYIN...

SELECTIVE CONTACT ON SOURCE AND DRAIN

LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED...

ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS

TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/...

SELF-ALIGNED SMALL CONTACT STRUCTURE

N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE C...

OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS AND STANDARD CELL

TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS

SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS

SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...

SEMICONDUCTOR HAVING A SOURCE/DRAIN CONTACT WITH A SINGLE INNER SPACER

GATE CONTACT ISOLATION IN A SEMICONDUCTOR

BACK-END-OF-LINE (BEOL) HIGH RESISTANCE (HI-R) CONDUCTOR LAYER IN A...

THREE DIMENSIONAL (3D) VERTICAL SPIRAL INDUCTOR AND TRANSFORMER

POWER DECOUPLING METAL-INSULATOR-METAL CAPACITOR

P-TYPE FIELD EFFECT TRANSISTOR (PFET) ON A SILICON GERMANIUM (GE) B...

SUBTRACTIVE DAMASCENE FORMATION OF HYBRID INTERCONNECTIONS

SELF-ALIGNED LOW RESISTANCE BURIED POWER RAIL THROUGH SINGLE DIFFUS...

HIGH DENSITY METAL-INSULATOR-METAL CAPACITOR

DOUBLE-SIDE BACK-END-OF-LINE METALLIZATION FOR PSEUDO THROUGH-SILIC...

SEMICONDUCTOR DEVICE IMPLEMENTED WITH BURIED RAILS

DEVICE CHANNEL PROFILE STRUCTURE

INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMA...

GATE-ALL-AROUND (GAA) TRANSISTOR WITH INSULATOR ON SUBSTRATE AND ME...