Haiping Dun

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench surrounded MOSFET with planar MOS gate
- Patent number 11,456,389
- Issue date Sep 27, 2022
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double trench MOSFET with trench gate
- Patent number 11,322,625
- Issue date May 3, 2022
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench MOS barrier junction all around rectifier and MOSFET
- Patent number 10,770,599
- Issue date Sep 8, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed Schottky rectifier
- Patent number 10,304,971
- Issue date May 28, 2019
- Champion Microelectronic Corp.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a cap above a metal layer
- Patent number 7,056,817
- Issue date Jun 6, 2006
- Intel Corporation
- Krishna Seshan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and substrate orientation for defect reduction and transisto...
- Patent number 5,171,703
- Issue date Dec 15, 1992
- Intel Corporation
- Yi-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Deep Trench Surrounded MOSFET with Planar MOS Gate
- Publication number 20200373438
- Publication date Nov 26, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Trench MOSFET With Trench Gate
- Publication number 20200373439
- Publication date Nov 26, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Manufacturing A Deep Trench Super Junction MOSFET
- Publication number 20200335580
- Publication date Oct 22, 2020
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Manufacturing A Deep Trench Super Junction MOSFET
- Publication number 20190326389
- Publication date Oct 24, 2019
- Champion Microelectronic Corp.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET
- Publication number 20180138322
- Publication date May 17, 2018
- Yutechnix, Inc.
- Haiping Dun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Speed Schottky Rectifier
- Publication number 20180019348
- Publication date Jan 18, 2018
- Yutechnix, Inc.
- Ho-Yuan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a cap above a metal layer
- Publication number 20060180945
- Publication date Aug 17, 2006
- Krishna Seshan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a cap above a metal layer
- Publication number 20040094836
- Publication date May 20, 2004
- Krishna Seshan
- H01 - BASIC ELECTRIC ELEMENTS

Haiping Dun

Person

Patents Grantslast 30 patents

Deep trench surrounded MOSFET with planar MOS gate

Double trench MOSFET with trench gate

Deep trench MOS barrier junction all around rectifier and MOSFET

High speed Schottky rectifier

Forming a cap above a metal layer

Device and substrate orientation for defect reduction and transisto...

Patents Applicationslast 30 patents

Deep Trench Surrounded MOSFET with Planar MOS Gate

Double Trench MOSFET With Trench Gate

Methods Of Manufacturing A Deep Trench Super Junction MOSFET

Method Of Manufacturing A Deep Trench Super Junction MOSFET

Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET

High Speed Schottky Rectifier

Forming a cap above a metal layer

Forming a cap above a metal layer