Haiqiang Wang

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
LDMOS transistor
- Patent number 9,870,916
- Issue date Jan 16, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and fabrication method thereof
- Patent number 9,691,604
- Issue date Jun 27, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout for LDMOS
- Patent number 9,647,110
- Issue date May 9, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiqiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,263,273
- Issue date Feb 16, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiqiang Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS TRANSISTOR
- Publication number 20170250175
- Publication date Aug 31, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- YONG CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW LAYOUT FOR LDMOS
- Publication number 20160204250
- Publication date Jul 14, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- HAIQIANG WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20160064552
- Publication date Mar 3, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- YONG CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150262820
- Publication date Sep 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiqiang Wang
- H01 - BASIC ELECTRIC ELEMENTS