Haiting Wang

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Lightly doped source/drain last method for dual-epi integration
- Patent number 9,293,580
- Issue date Mar 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure having lightly doped region
- Patent number 8,952,459
- Issue date Feb 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka Hing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped source/drain last method for dual-epi integration
- Patent number 8,633,070
- Issue date Jan 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gate structure
- Patent number 8,535,998
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka Hing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned two-step STI formation through dummy poly removal
- Patent number 8,502,316
- Issue date Aug 6, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-strained source/drain structures
- Patent number 8,405,160
- Issue date Mar 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor device with recessed channel
- Patent number 8,368,147
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy structure for isolating devices in integrated circuits
- Patent number 8,324,668
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Ping Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Lightly Doped Source/Drain Last Method For Dual-EPI Integration
- Publication number 20140103454
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing FUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE HAVING LIGHTLY DOPED REGION
- Publication number 20130334617
- Publication date Dec 19, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka HING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20110291201
- Publication date Dec 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Semiconductor Device with Recessed Channel
- Publication number 20110254105
- Publication date Oct 20, 2011
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A GATE STRUCTURE
- Publication number 20110223752
- Publication date Sep 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fung Ka HING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Two-Step STI Formation Through Dummy Poly Removal
- Publication number 20110193167
- Publication date Aug 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHTLY DOPED SOURCE/DRAIN LAST METHOD FOR DUAL-EPI INTEGRATION
- Publication number 20110193179
- Publication date Aug 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY STRUCTURE FOR ISOLATING DEVICES IN INTEGRATED CIRCUITS
- Publication number 20110147765
- Publication date Jun 23, 2011
- TAIWAN SEMICONDUCTOR MANUFATCURING COMPANY, LTD.
- Li-Ping Huang
- H01 - BASIC ELECTRIC ELEMENTS

Haiting Wang

Person

Patents Grantslast 30 patents

Lightly doped source/drain last method for dual-epi integration

Gate structure having lightly doped region

Lightly doped source/drain last method for dual-epi integration

Method for fabricating a gate structure

Self-aligned two-step STI formation through dummy poly removal

Multi-strained source/drain structures

Strained semiconductor device with recessed channel

Dummy structure for isolating devices in integrated circuits

Patents Applicationslast 30 patents

Lightly Doped Source/Drain Last Method For Dual-EPI Integration

GATE STRUCTURE HAVING LIGHTLY DOPED REGION

MULTI-STRAINED SOURCE/DRAIN STRUCTURES

Strained Semiconductor Device with Recessed Channel

METHOD FOR FABRICATING A GATE STRUCTURE

Self-Aligned Two-Step STI Formation Through Dummy Poly Removal

LIGHTLY DOPED SOURCE/DRAIN LAST METHOD FOR DUAL-EPI INTEGRATION

DUMMY STRUCTURE FOR ISOLATING DEVICES IN INTEGRATED CIRCUITS