Hajime Inuzuka

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Nishio, JP

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Patents Grantslast 30 patents

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Semiconductor device such as a hall-effect sensor or solar cell bar...
- Patent number 6,559,480
- Issue date May 6, 2003
- Denso Corporation
- Hajime Inuzuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photocoupler having element isolation layers for low cross-talk low...
- Patent number 5,838,174
- Issue date Nov 17, 1998
- Denso Corporation
- Tsuyoshi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,629,534
- Issue date May 13, 1997
- Nippondenso Co., Ltd.
- Hajime Inuzuka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor light emitting device with depletion layer
- Patent number 5,610,412
- Issue date Mar 11, 1997
- Nippondenso Co., Ltd.
- Naomi Awano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with vaporphase grown epitaxial
- Patent number 5,578,521
- Issue date Nov 26, 1996
- Nippondenso Co., Ltd.
- Yasutoshi Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor strain sensor
- Patent number 5,329,271
- Issue date Jul 12, 1994
- Nippondenso Co., Ltd.
- Hajime Inuzuka
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device
- Patent number 5,151,764
- Issue date Sep 29, 1992
- Nippondenso Co., Ltd.
- Yasutoshi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS