Hajime MATSUDA

Person

Yamanashi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,896,970
- Issue date Jan 19, 2021
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming epitaxial substrate and semiconductor device pro...
- Patent number 10,840,091
- Issue date Nov 17, 2020
- Sumitomo Electric Device Innovations, Inc.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,734,510
- Issue date Aug 4, 2020
- Sumitomo Electric Device Innovations, Inc.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming high electron mobility transistor (HEMT) and HEM...
- Patent number 10,686,053
- Issue date Jun 16, 2020
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming semiconductor epitaxial substrate
- Patent number 10,546,746
- Issue date Jan 28, 2020
- Sumitomo Electric Device Innovations, Inc.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,541,322
- Issue date Jan 21, 2020
- Sumitomo Electric Device Innovations, Inc.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of producing epitaxial substrate
- Patent number 10,147,605
- Issue date Dec 4, 2018
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process of forming nitride semiconductor layers
- Patent number 10,056,252
- Issue date Aug 21, 2018
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having via hole coated in side surfaces with h...
- Patent number 9,673,094
- Issue date Jun 6, 2017
- Sumitomo Electric Device Innovations, Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for fabricating the same
- Patent number 8,188,520
- Issue date May 29, 2012
- Eudyna Devices Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for fabricating the same
- Patent number 7,964,486
- Issue date Jun 21, 2011
- Eudyna Devices Inc.
- Tadashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch circuit, semiconductor device, and method of manufacturing s...
- Patent number 7,821,031
- Issue date Oct 26, 2010
- Eudyna Devices Inc.
- Hajime Matsuda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 7,087,957
- Issue date Aug 8, 2006
- Eudyna Devices, Inc.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a microstrip line
- Patent number 6,504,189
- Issue date Jan 7, 2003
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave monolithic integrated circuit and fabrication process the...
- Patent number 6,476,427
- Issue date Nov 5, 2002
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed compound semiconductor device having an improved gate st...
- Patent number 6,329,230
- Issue date Dec 11, 2001
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,316,297
- Issue date Nov 13, 2001
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method of manufacturing the same
- Patent number 6,200,838
- Issue date Mar 13, 2001
- Fujitsu Quantum Devices Limited
- Kazutaka Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed compound semiconductor device having an improved gate st...
- Patent number 6,078,071
- Issue date Jun 20, 2000
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed semiconductor device having a dual-layer gate structure...
- Patent number 6,037,245
- Issue date Mar 14, 2000
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20210167188
- Publication date Jun 3, 2021
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20200312982
- Publication date Oct 1, 2020
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200127129
- Publication date Apr 23, 2020
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hajime MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...
- Publication number 20190081154
- Publication date Mar 14, 2019
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING SEMICONDUCTOR EPITAXIAL SUBSTRATE
- Publication number 20190006176
- Publication date Jan 3, 2019
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hajime MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180197978
- Publication date Jul 12, 2018
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hajime MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE PRO...
- Publication number 20180174824
- Publication date Jun 21, 2018
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hajime MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF PRODUCING EPITAXIAL SUBSTRATE
- Publication number 20180151349
- Publication date May 31, 2018
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS OF FORMING NITRIDE SEMICONDUCTOR LAYERS
- Publication number 20180061632
- Publication date Mar 1, 2018
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTO...
- Publication number 20160343842
- Publication date Nov 24, 2016
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hajime MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING VIA HOLE COATED IN SIDE SURFACES WITH H...
- Publication number 20160190299
- Publication date Jun 30, 2016
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20110215383
- Publication date Sep 8, 2011
- EUDYNA DEVICES INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20080211052
- Publication date Sep 4, 2008
- EUDYNA DEVICES INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080174357
- Publication date Jul 24, 2008
- EUDYNA DEVICES INC.
- Hajime Matsuda
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Switch circuit, semiconductor device, and method of manufacturing s...
- Publication number 20060219534
- Publication date Oct 5, 2006
- EUDYNA DEVICES INC.
- Hajime Matsuda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20050189584
- Publication date Sep 1, 2005
- EUDYNA DEVICES INC.
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Microwave monolithic integrated circuit and fabrication process the...
- Publication number 20010012652
- Publication date Aug 9, 2001
- FUJITSU QUANTUM DEVICES LIMITED
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Hajime MATSUDA

Person

Patents Grantslast 30 patents

Process of forming high electron mobility transistor (HEMT) and HEM...

Process of forming epitaxial substrate and semiconductor device pro...

Semiconductor device

Process of forming high electron mobility transistor (HEMT) and HEM...

Process of forming semiconductor epitaxial substrate

Semiconductor device

Process of producing epitaxial substrate

Process of forming nitride semiconductor layers

Semiconductor device having via hole coated in side surfaces with h...

Field effect transistor and method for fabricating the same

Field effect transistor and method for fabricating the same

Switch circuit, semiconductor device, and method of manufacturing s...

Semiconductor device and manufacturing method of the same

Semiconductor device having a microstrip line

Microwave monolithic integrated circuit and fabrication process the...

High-speed compound semiconductor device having an improved gate st...

Semiconductor device and method for fabricating the same

Compound semiconductor device and method of manufacturing the same

High-speed compound semiconductor device having an improved gate st...

High-speed semiconductor device having a dual-layer gate structure...

Patents Applicationslast 30 patents

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

SEMICONDUCTOR DEVICE

PROCESS OF FORMING HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND HEM...

PROCESS OF FORMING SEMICONDUCTOR EPITAXIAL SUBSTRATE

SEMICONDUCTOR DEVICE

PROCESS OF FORMING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE PRO...

PROCESS OF PRODUCING EPITAXIAL SUBSTRATE

PROCESS OF FORMING NITRIDE SEMICONDUCTOR LAYERS

METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTO...

SEMICONDUCTOR DEVICE HAVING VIA HOLE COATED IN SIDE SURFACES WITH H...

FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

Switch circuit, semiconductor device, and method of manufacturing s...

Semiconductor device and manufacturing method of the same

Microwave monolithic integrated circuit and fabrication process the...