Hak-Lay Chuang

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Device for high-K and metal gate stacks
- Patent number 9,711,415
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N/P boundary effect reduction for metal gate transistors
- Patent number 9,536,867
- Issue date Jan 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for a field-effect transistor with a raised drain...
- Patent number 9,257,347
- Issue date Feb 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a metal gate semiconductor device
- Patent number 9,209,089
- Issue date Dec 8, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N/P boundary effect reduction for metal gate transistors
- Patent number 9,123,694
- Issue date Sep 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of hybrid high-k/metal-gate stack fabrication
- Patent number 9,093,559
- Issue date Jul 28, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned insulated film for high-k metal gate device
- Patent number 8,822,283
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate semiconductor device and method of fabricating thereof
- Patent number 8,772,114
- Issue date Jul 8, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cost-effective gate replacement process
- Patent number 8,753,931
- Issue date Jun 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with a vertical gate structure
- Patent number 8,742,492
- Issue date Jun 3, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N/P boundary effect reduction for metal gate transistors
- Patent number 8,703,595
- Issue date Apr 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for high-K and metal gate stacks
- Patent number 8,698,252
- Issue date Apr 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having a defined minim...
- Patent number 8,635,573
- Issue date Jan 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact for high-K metal gate device
- Patent number 8,546,227
- Issue date Oct 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS
- Publication number 20150364459
- Publication date Dec 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR A FIELD-EFFECT TRANSISTOR WITH A RAISED DRAIN...
- Publication number 20140061775
- Publication date Mar 6, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device with a Vertical Gate Structure
- Publication number 20140042524
- Publication date Feb 13, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20130299913
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyun-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS
- Publication number 20130285150
- Publication date Oct 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cost-Effective Gate Replacement Process
- Publication number 20130264652
- Publication date Oct 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A METAL GATE SEMICONDUCTOR DEVICE
- Publication number 20130260547
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- Sheng-Chen Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF HYBRID HIGH-K/METAL-GATE STACK FABRICATION
- Publication number 20130234254
- Publication date Sep 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS
- Publication number 20130126977
- Publication date May 23, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FOR HIGH-K METAL GATE DEVICE
- Publication number 20130069174
- Publication date Mar 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE
- Publication number 20130056837
- Publication date Mar 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE HAVING DEFINED GATE SPACING AND METHOD OF...
- Publication number 20130032884
- Publication date Feb 7, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- Hak-Lay Chuang
- G06 - COMPUTING CALCULATING COUNTING

Hak-Lay Chuang

Person

Patents Grantslast 30 patents

Device for high-K and metal gate stacks

N/P boundary effect reduction for metal gate transistors

System and method for a field-effect transistor with a raised drain...

Method of fabricating a metal gate semiconductor device

N/P boundary effect reduction for metal gate transistors

Method of hybrid high-k/metal-gate stack fabrication

Self-aligned insulated film for high-k metal gate device

Metal gate semiconductor device and method of fabricating thereof

Cost-effective gate replacement process

Device with a vertical gate structure

N/P boundary effect reduction for metal gate transistors

Device for high-K and metal gate stacks

Method of fabricating a semiconductor device having a defined minim...

Contact for high-K metal gate device

Patents Applicationslast 30 patents

N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS

SYSTEM AND METHOD FOR A FIELD-EFFECT TRANSISTOR WITH A RAISED DRAIN...

Device with a Vertical Gate Structure

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS

Cost-Effective Gate Replacement Process

METHOD OF FABRICATING A METAL GATE SEMICONDUCTOR DEVICE

METHOD OF HYBRID HIGH-K/METAL-GATE STACK FABRICATION

N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS

CONTACT FOR HIGH-K METAL GATE DEVICE

SELF-ALIGNED INSULATED FILM FOR HIGH-K METAL GATE DEVICE

INTEGRATED CIRCUIT DEVICE HAVING DEFINED GATE SPACING AND METHOD OF...