Halid MULAOSMANOVIC

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
IC structure with MFMIS memory cell and CMOS transistor
- Patent number 12,336,230
- Issue date Jun 17, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field-effect transistors with a hybrid well
- Patent number 12,268,019
- Issue date Apr 1, 2025
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile static random access memory bit cells with ferroelectr...
- Patent number 12,176,023
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Pirooz Parvarandeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with adjustable rectifying transfer characteristic
- Patent number 10,978,125
- Issue date Apr 13, 2021
- NaMLab gGmbH
- Halid Mulaosmanović
- G11 - INFORMATION STORAGE
Information Patent Grant
Artificial neuron based on ferroelectric circuit element
- Patent number 10,963,776
- Issue date Mar 30, 2021
- NaMLab gGmbH
- Halid Mulaosmanovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Polarization-based configurable logic gate
- Patent number 10,424,379
- Issue date Sep 24, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel ferroelectric memory cell for an integrated circuit
- Patent number 10,043,567
- Issue date Aug 7, 2018
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel ferroelectric memory cell for an integrated circuit
- Patent number 9,830,969
- Issue date Nov 28, 2017
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS INCLUDING AN INTRINSIC BASE WITH...
- Publication number 20250227943
- Publication date Jul 10, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
Information Patent Application
CRYSTALLINE SEMICONDUCTOR LAYER BETWEEN BIPOLAR TRANSISTOR AND FIEL...
- Publication number 20250227999
- Publication date Jul 10, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
Information Patent Application
BIPOLAR TRANSISTOR BASE STRUCTURE COUPLED TO FIELD EFFECT TRANSISTO...
- Publication number 20250228009
- Publication date Jul 10, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhixing Zhao
Information Patent Application
STRUCTURE WITH FERROELECTRIC MEMORY STACKS HAVING DIFFERENT SWITCHI...
- Publication number 20250194098
- Publication date Jun 12, 2025
- GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING MEMORY ELEMENTS ACCESSED BY HETEROJUNCTION BIPOLAR TRANSI...
- Publication number 20250159905
- Publication date May 15, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE STATIC RANDOM ACCESS MEMORY BIT CELLS WITH FERROELECTR...
- Publication number 20240194253
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Pirooz Parvarandeh
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL
- Publication number 20240120420
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...
- Publication number 20240014320
- Publication date Jan 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL NEURON BASED ON FERROELECTRIC CIRCUIT ELEMENT
- Publication number 20200065647
- Publication date Feb 27, 2020
- NaMLab gGmbH
- Halid MULAOSMANOVIC
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POLARIZATION-BASED CONFIGURABLE LOGIC GATE
- Publication number 20190172539
- Publication date Jun 6, 2019
- NaMLab gGmbH
- Stefan Slesazeck
- G11 - INFORMATION STORAGE
Information Patent Application
Multilevel Ferroelectric Memory Cell for an Integrated Circuit
- Publication number 20180082729
- Publication date Mar 22, 2018
- NaMLab gGmbH
- Stefan SLESAZECK
- G11 - INFORMATION STORAGE
Information Patent Application
Multilevel Ferroelectric Memory Cell for an Integrated Circuit
- Publication number 20170162250
- Publication date Jun 8, 2017
- NaMLab gGmbH
- Stefan SLESAZECK
- G11 - INFORMATION STORAGE

Halid MULAOSMANOVIC

Person

Patents Grantslast 30 patents

IC structure with MFMIS memory cell and CMOS transistor

Ferroelectric field-effect transistors with a hybrid well

Non-volatile static random access memory bit cells with ferroelectr...

Structures for a ferroelectric field-effect transistor and related...

Transistor with adjustable rectifying transfer characteristic

Artificial neuron based on ferroelectric circuit element

Polarization-based configurable logic gate

Multilevel ferroelectric memory cell for an integrated circuit

Multilevel ferroelectric memory cell for an integrated circuit

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTORS INCLUDING AN INTRINSIC BASE WITH...

CRYSTALLINE SEMICONDUCTOR LAYER BETWEEN BIPOLAR TRANSISTOR AND FIEL...

BIPOLAR TRANSISTOR BASE STRUCTURE COUPLED TO FIELD EFFECT TRANSISTO...

STRUCTURE WITH FERROELECTRIC MEMORY STACKS HAVING DIFFERENT SWITCHI...

SWITCHING MEMORY ELEMENTS ACCESSED BY HETEROJUNCTION BIPOLAR TRANSI...

NON-VOLATILE STATIC RANDOM ACCESS MEMORY BIT CELLS WITH FERROELECTR...

FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL

STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...

ARTIFICIAL NEURON BASED ON FERROELECTRIC CIRCUIT ELEMENT

POLARIZATION-BASED CONFIGURABLE LOGIC GATE

Multilevel Ferroelectric Memory Cell for an Integrated Circuit

Multilevel Ferroelectric Memory Cell for an Integrated Circuit