Halting Wang

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,569,437
- Issue date Jan 31, 2023
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor device and method of making suc...
- Patent number 11,462,632
- Issue date Oct 4, 2022
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three part source/drain region structure for transistor
- Patent number 11,329,158
- Issue date May 10, 2022
- GLOBALFOUNDRIES U.S. INC.
- Halting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passive devices over polycrystalline semiconductor fins
- Patent number 11,289,474
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES U.S. INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line gate structures
- Patent number 11,171,237
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing dielectric void over trench isolation region
- Patent number 11,171,036
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with a sectioned epitaxial semiconductor layer
- Patent number 11,133,417
- Issue date Sep 28, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures
- Patent number 11,127,834
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS integrated circuit product
- Patent number 11,075,298
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Halting Wang

Person

Patents Grantslast 30 patents

Memory device comprising a top via electrode and methods of making...

Lateral bipolar junction transistor device and method of making suc...

Three part source/drain region structure for transistor

Passive devices over polycrystalline semiconductor fins

Middle of line gate structures

Preventing dielectric void over trench isolation region

Transistors with a sectioned epitaxial semiconductor layer

Gate structures

LDMOS integrated circuit product