Han-Jong Chia

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming semiconductor memory device
- Patent number 12,274,077
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Chih Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including etch stop pattern and method of forming the...
- Patent number 12,268,007
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device
- Patent number 12,262,542
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 12,250,822
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
Information Patent Grant
Memory device, and integrated circuit device
- Patent number 12,250,829
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Grid structure to reduce domain size in ferroelectric memory device
- Patent number 12,245,435
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device and method
- Patent number 12,238,926
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
3D RAM SL/BL contact modulation
- Patent number 12,232,322
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 12,232,328
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,219,775
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level magnetic tunnel junction nor device with wrap-around ga...
- Patent number 12,193,242
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
Information Patent Grant
Layered structure, semiconductor device including the same, and man...
- Patent number 12,191,389
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D ferroelectric memory
- Patent number 12,193,240
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
Information Patent Grant
Memory with FRAM and SRAM of IC
- Patent number 12,165,707
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming three-dimensional memory devices
- Patent number 12,167,608
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor chip
- Patent number 12,150,308
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric FinFET memory device
- Patent number 12,150,311
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array staircase structure
- Patent number 12,148,505
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric tunnel junction memory device using a magnesium oxide...
- Patent number 12,120,885
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 12,101,939
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
Information Patent Grant
Air gaps in memory array structures
- Patent number 12,087,621
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 12,089,418
- Issue date Sep 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) element and its fabrication process
- Patent number 12,069,961
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ya-Ling Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array and methods of forming same
- Patent number 12,069,864
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Ming Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Gated ferroelectric memory cells for memory cell array and methods...
- Patent number 12,069,868
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 12,063,787
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 12,058,867
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric tunnel junction devices with a sparse seed layer and...
- Patent number 12,057,471
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a logic device and a memory device bei...
- Patent number 12,058,869
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D FERROELECTRIC MEMORY
- Publication number 20250089264
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250089304
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mauricio MANFRINI
Information Patent Application
SYSTEMS FOR VISIBLE WAVELENGTH MEASUREMENT OF OVERLAY OF WAFER-ON-W...
- Publication number 20250054871
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240422986
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
Information Patent Application
AIR GAPS IN MEMORY ARRAY STRUCTURES
- Publication number 20240404875
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...
- Publication number 20240397731
- Publication date Nov 28, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun SUN
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240389334
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP
- Publication number 20240389351
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES
- Publication number 20240389337
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE
- Publication number 20240389345
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240389338
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
Information Patent Application
SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF
- Publication number 20240389346
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240381656
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...
- Publication number 20240365560
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS
- Publication number 20240365676
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YA-LING LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Device with Ferroelectric Material
- Publication number 20240365553
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Lu
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240357828
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated Ferroelectric Memory Cells for Memory Cell Array and Method f...
- Publication number 20240357834
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...
- Publication number 20240357829
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- BO-FENG YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20240357826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...
- Publication number 20240347581
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Han-Jong CHIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH FERROELECTRIC MATERIAL
- Publication number 20240334708
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240324235
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20240312830
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20240284679
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Cheng Yang
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY ARRAY CONTACT STRUCTURES
- Publication number 20240276726
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Array Word Line Routing
- Publication number 20240274160
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-END-OF-LINE SELECTOR FOR MEMORY DEVICE
- Publication number 20240276738
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...
- Publication number 20240268122
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
3D Stackable Memory and Methods of Manufacture
- Publication number 20240268128
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS

Han-Jong Chia

Person

Patents Grantslast 30 patents

Method of forming semiconductor memory device

Memory device including etch stop pattern and method of forming the...

Ferroelectric memory device

Three-dimensional memory device and manufacturing method thereof

Memory device, and integrated circuit device

Grid structure to reduce domain size in ferroelectric memory device

Three-dimensional memory device and method

3D RAM SL/BL contact modulation

Memory devices

Semiconductor structure and method of forming the same

Three-dimensional memory device

Multi-level magnetic tunnel junction nor device with wrap-around ga...

Layered structure, semiconductor device including the same, and man...

3D ferroelectric memory

Memory with FRAM and SRAM of IC

Methods of forming three-dimensional memory devices

Semiconductor chip

Embedded ferroelectric FinFET memory device

Memory array staircase structure

Ferroelectric tunnel junction memory device using a magnesium oxide...

Three-dimensional memory device with ferroelectric material

Air gaps in memory array structures

Magnetoresistive stack with seed region and method of manufacturing...

Magnetic tunnel junction (MTJ) element and its fabrication process

Memory array and methods of forming same

Gated ferroelectric memory cells for memory cell array and methods...

Three-dimensional memory device and manufacturing method thereof

Memory device

Ferroelectric tunnel junction devices with a sparse seed layer and...

Semiconductor structure with a logic device and a memory device bei...

Patents Applicationslast 30 patents

3D FERROELECTRIC MEMORY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SYSTEMS FOR VISIBLE WAVELENGTH MEASUREMENT OF OVERLAY OF WAFER-ON-W...

THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

AIR GAPS IN MEMORY ARRAY STRUCTURES

MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...

METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES

SEMICONDUCTOR CHIP

MEMORY DEVICES

EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR CHIP AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES

FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE...

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

Three-Dimensional Memory Device with Ferroelectric Material

THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Gated Ferroelectric Memory Cells for Memory Cell Array and Method f...

SEMICONDUCTOR STRUCTURE WITH A LOGIC DEVICE AND A MEMORY DEVICE BEI...

METHOD OF FORMING MEMORY DEVICE

Ferroelectric Tunnel Junction Devices with a Sparse Seed Layer and...

THREE-DIMENSIONAL MEMORY DEVICE WITH FERROELECTRIC MATERIAL

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

3D MEMORY ARRAY CONTACT STRUCTURES

Memory Array Word Line Routing

BACK-END-OF-LINE SELECTOR FOR MEMORY DEVICE

THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVI...

3D Stackable Memory and Methods of Manufacture