Han-Lin Hsu

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Kaohsiung City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming gate dielectric layer for MOS transistor
- Patent number 9,761,687
- Issue date Sep 12, 2017
- United Microelectronics Corp.
- Han-Lin Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING GATE DIELECTRIC LAYER FOR MOS TRANSISTOR
- Publication number 20160196971
- Publication date Jul 7, 2016
- UNITED MICROELECTRONICS CORP.
- Han-Lin Hsu
- H01 - BASIC ELECTRIC ELEMENTS