Han Yu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Uplink resource sharing method, base station and terminal
- Patent number 10,142,986
- Issue date Nov 27, 2018
- Shanghai Research Center for Wireless Communications
- Han Yu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Radio frequency LDMOS device and a fabrication method therefor
- Patent number 9,543,431
- Issue date Jan 10, 2017
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Han Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating P-type surface-channel LDMOS device with impr...
- Patent number 9,136,374
- Issue date Sep 15, 2015
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF LDMOS device and fabrication method thereof
- Patent number 9,136,350
- Issue date Sep 15, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RFLDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230187385
- Publication date Jun 15, 2023
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Han YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPLINK RESOURCE SHARING METHOD, BASE STATION AND TERMINAL
- Publication number 20170230968
- Publication date Aug 10, 2017
- Shanghai Research Center for Wireless Communications
- Han YU
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
RADIO FREQUENCY LDMOS DEVICE AND A FABRICATION METHOD THEREFOR
- Publication number 20160190310
- Publication date Jun 30, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Han Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140131796
- Publication date May 15, 2014
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING P-TYPE SURFACE-CHANNEL LDMOS DEVICE WITH IMPR...
- Publication number 20140057405
- Publication date Feb 27, 2014
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICIDE LAYERS
- Publication number 20130130486
- Publication date May 23, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Shengan XIAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Uplink resource sharing method, base station and terminal

Radio frequency LDMOS device and a fabrication method therefor

Method of fabricating P-type surface-channel LDMOS device with impr...

RF LDMOS device and fabrication method thereof

Patents Applicationslast 30 patents

RFLDMOS DEVICE AND MANUFACTURING METHOD THEREOF

UPLINK RESOURCE SHARING METHOD, BASE STATION AND TERMINAL

RADIO FREQUENCY LDMOS DEVICE AND A FABRICATION METHOD THEREFOR

RF LDMOS DEVICE AND FABRICATION METHOD THEREOF

METHOD OF FABRICATING P-TYPE SURFACE-CHANNEL LDMOS DEVICE WITH IMPR...

METHOD OF FORMING SILICIDE LAYERS