HANG LIAO

Person

ZHUHAI CITY, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 12,199,000
- Issue date Jan 14, 2025
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,125,845
- Issue date Oct 22, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,046,647
- Issue date Jul 23, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved gate leakage current
- Patent number 12,040,394
- Issue date Jul 16, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,972,996
- Issue date Apr 30, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric gate structure
- Patent number 11,769,826
- Issue date Sep 26, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and electrostatic discharge protection circuit
- Patent number 11,699,899
- Issue date Jul 11, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,600,708
- Issue date Mar 7, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,563,097
- Issue date Jan 24, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Ming-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric gate structure
- Patent number 11,515,409
- Issue date Nov 29, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240243029
- Publication date Jul 18, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE
- Publication number 20230058006
- Publication date Feb 23, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20220375926
- Publication date Nov 24, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- HANG LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
- Publication number 20220376493
- Publication date Nov 24, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- HANG LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220310469
- Publication date Sep 29, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220109056
- Publication date Apr 7, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE
- Publication number 20210399124
- Publication date Dec 23, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED GATE LEAKAGE CURRENT
- Publication number 20210399123
- Publication date Dec 23, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210328029
- Publication date Oct 21, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20200365699
- Publication date Nov 19, 2020
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- MING-HONG CHANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device structures and methods of manufacturing the same

Electronic device

Semiconductor device and fabrication method thereof

Semiconductor device having improved gate leakage current

Semiconductor device structures and methods of manufacturing the same

Semiconductor device with asymmetric gate structure

Electronic device and electrostatic discharge protection circuit

Semiconductor device and manufacturing method thereof

High electron mobility transistor and fabrication method thereof

Semiconductor device with asymmetric gate structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE

ELECTRONIC DEVICE

ELECTRONIC DEVICE AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE WITH ASYMMETRIC GATE STRUCTURE

SEMICONDUCTOR DEVICE HAVING IMPROVED GATE LEAKAGE CURRENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF