Hang M. Liaw

Person

Scottsdale, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a semiconductor device having a heteroepitaxial...
- Patent number 5,891,769
- Issue date Apr 6, 1999
- Motorola, Inc.
- Hang Ming Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for enhancing aluminum nitride
- Patent number 5,520,785
- Issue date May 28, 1996
- Motorola, Inc.
- Keenan L. Evans
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ohmic contact for III-V semiconductor materials
- Patent number 5,430,327
- Issue date Jul 4, 1995
- Motorola, Inc.
- Schyi-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an ohmic contact to III-V semiconductor materials
- Patent number 5,275,971
- Issue date Jan 4, 1994
- Motorola, Inc.
- Schyi-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a bipolar transistor having a silicon carbide layer
- Patent number 5,272,096
- Issue date Dec 21, 1993
- Motorola, Inc.
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage, deep junction device and method
- Patent number 5,141,887
- Issue date Aug 25, 1992
- Motorola, Inc.
- Hang M. Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming planar isolation regions
- Patent number 5,108,946
- Issue date Apr 28, 1992
- Motorola, Inc.
- Peter J. Zdebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of polycrystalline silicon
- Patent number 5,080,933
- Issue date Jan 14, 1992
- Motorola, Inc.
- Melissa E. Grupen-Shemansky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective deposition of amorphous and polycrystalline silicon
- Patent number 4,963,506
- Issue date Oct 16, 1990
- Motorola Inc.
- Hang M. Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline semiconductor buried layers for electrical contacts...
- Patent number 4,849,371
- Issue date Jul 18, 1989
- Motorola Inc.
- Kent W. Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a void free wafer via vacuum lamination
- Patent number 4,818,323
- Issue date Apr 4, 1989
- Motorola Inc.
- Frank S. d'Aragona
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for improved surface planarity in selective epitaxial silicon
- Patent number 4,786,615
- Issue date Nov 22, 1988
- Motorola Inc.
- Hang M. Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistors with poly-sidewall contacts utilizing...
- Patent number 4,663,831
- Issue date May 12, 1987
- Motorola, Inc.
- Mark S. Birrittella
- H01 - BASIC ELECTRIC ELEMENTS

Hang M. Liaw

Person

Patents Grantslast 30 patents

Method for forming a semiconductor device having a heteroepitaxial...

Method for enhancing aluminum nitride

Ohmic contact for III-V semiconductor materials

Method of forming an ohmic contact to III-V semiconductor materials

Method for making a bipolar transistor having a silicon carbide layer

Low voltage, deep junction device and method

Method of forming planar isolation regions

Selective deposition of polycrystalline silicon

Selective deposition of amorphous and polycrystalline silicon

Monocrystalline semiconductor buried layers for electrical contacts...

Method of making a void free wafer via vacuum lamination

Method for improved surface planarity in selective epitaxial silicon

Method of forming transistors with poly-sidewall contacts utilizing...