Hang YIN

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 11,818,891
- Issue date Nov 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Kai Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and fabrication method thereof
- Patent number 11,404,438
- Issue date Aug 2, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250233067
- Publication date Jul 17, 2025
- Yangtze Memory Technologies Co., Ltd.
- Renyan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220302167
- Publication date Sep 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20220085181
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220052070
- Publication date Feb 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Kai HAN
- H01 - BASIC ELECTRIC ELEMENTS