Hangbing Lv

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Neural network operation device
- Patent number 12,124,945
- Issue date Oct 22, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Writing method and erasing method of fusion memory
- Patent number 12,002,500
- Issue date Jun 4, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G11 - INFORMATION STORAGE
Information Patent Grant
Spintronic device, SOT-MRAM storage cell, storage array and in-memo...
- Patent number 11,790,968
- Issue date Oct 17, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong Xing
- G11 - INFORMATION STORAGE
Information Patent Grant
Fusion memory
- Patent number 11,776,607
- Issue date Oct 3, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self-rectifying resistive memory and fabrication method thereof
- Patent number 11,641,787
- Issue date May 2, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance random access memory and method for fabricating the same
- Patent number 11,245,074
- Issue date Feb 8, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive bridge semiconductor component and manufacturing method...
- Patent number 11,223,013
- Issue date Jan 11, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S1R memory integrated structure with larger selector surface area...
- Patent number 11,205,750
- Issue date Dec 21, 2021
- Institute of Microelectronics Chinese Academy of Sciences
- Qing Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for implementing logic calculation based on a crossbar array...
- Patent number 11,189,345
- Issue date Nov 30, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Nonvolatile resistive memory device and manufacturing method thereof
- Patent number 11,101,321
- Issue date Aug 24, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Writam Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-gating resistive storage device having resistance transition l...
- Patent number 10,720,578
- Issue date Jul 21, 2020
- The Institute of Microelectronics of Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of Cu-based resistive random access memory, and...
- Patent number 10,700,276
- Issue date Jun 30, 2020
- The Institute of Microelectronics of Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selection device for use in bipolar resistive memory and manufactur...
- Patent number 10,665,780
- Issue date May 26, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-gated RRAM cell and method for manufacturing the same
- Patent number 10,608,177
- Issue date Mar 31, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating thermal effect and reducing thermal crosstalk...
- Patent number 10,418,549
- Issue date Sep 17, 2019
- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Nianduan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for a nonvolatile resistive switching memory d...
- Patent number 10,312,439
- Issue date Jun 4, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of Cu-based resistive random access memory
- Patent number 10,305,035
- Issue date May 28, 2019
- The Institute of Microelectronics of Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-terminal atomic switching device and method of manufacturing...
- Patent number 10,297,748
- Issue date May 21, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive switching memory device and manufacturing met...
- Patent number 10,134,983
- Issue date Nov 20, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gating device cell for cross array of bipolar resistive memory cells
- Patent number 9,508,776
- Issue date Nov 29, 2016
- Insitute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal oxide resistive switching memory and method for manufacturing...
- Patent number 8,735,245
- Issue date May 27, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cell and memory
- Patent number 8,642,989
- Issue date Feb 4, 2014
- Institute of Microeletronics, Chinese Academy of Sciences
- Qi Liu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME
- Publication number 20240023469
- Publication date Jan 18, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin XU
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-REFERENCE STORAGE STRUCTURE AND STORAGE AND CALCULATION INTEGR...
- Publication number 20240005974
- Publication date Jan 4, 2024
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong XING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PREPARING PROGRAMMABLE DIODE, PROGRAMMABLE DIODE AND FERR...
- Publication number 20230397429
- Publication date Dec 7, 2023
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...
- Publication number 20230368838
- Publication date Nov 16, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Xiaoxin Xu
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY STORAGE UNIT AND METHOD OF PREPARING THE SAME, AND CO...
- Publication number 20230335182
- Publication date Oct 19, 2023
- Insitute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE AND METHOD FOR TESTING FATIGUE CHARACTERISTICS OF SELECTOR
- Publication number 20230335215
- Publication date Oct 19, 2023
- INSTITUTE OF MICROELECTRONICS, CHINSE ACADEMY OF SCIENCES
- Qing LUO
- G11 - INFORMATION STORAGE
Information Patent Application
SYMMETRIC MEMORY CELL AND BNN CIRCUIT
- Publication number 20230267990
- Publication date Aug 24, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE, METHOD FOR CHANGING RESISTANCE STATE THERE...
- Publication number 20230263070
- Publication date Aug 17, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Guozhong Xing
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, AND VOLTAGE BIASING...
- Publication number 20230197152
- Publication date Jun 22, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G11 - INFORMATION STORAGE
Information Patent Application
HFO2,-BASED FERROELECTRIC CAPACITOR AND PREPARATION METHOD THEREOF,...
- Publication number 20230015379
- Publication date Jan 19, 2023
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR AND PREPARATION METHOD THEREOF
- Publication number 20220320424
- Publication date Oct 6, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPINTRONIC DEVICE, SOT-MRAM STORAGE CELL, STORAGE ARRAY AND IN-MEMO...
- Publication number 20220310146
- Publication date Sep 29, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Guozhong XING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARTIFICIAL SENSORY NERVOUS CIRCUIT AND MANUFACTURING METHOD THEREOF
- Publication number 20220261621
- Publication date Aug 18, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qi LIU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
AFFERENT NEURON CIRCUIT AND MECHANORECEPTIVE SYSTEM
- Publication number 20220253684
- Publication date Aug 11, 2022
- INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES
- Qi LIU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEURAL NETWORK OPERATION SYSTEM
- Publication number 20220172035
- Publication date Jun 2, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY
- Publication number 20220122997
- Publication date Apr 21, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRITING METHOD AND ERASING METHOD OF FUSION MEMORY
- Publication number 20220115052
- Publication date Apr 14, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- G11 - INFORMATION STORAGE
Information Patent Application
FUSION MEMORY
- Publication number 20220093150
- Publication date Mar 24, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME
- Publication number 20210296579
- Publication date Sep 23, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURON CIRCUIT AND NEURAL NETWORK CIRCUIT
- Publication number 20210295143
- Publication date Sep 23, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTANCE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20210175420
- Publication date Jun 10, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-RECTIFYING RESISTIVE MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20210013404
- Publication date Jan 14, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPLEMENTING LOGIC CALCULATION BASED ON A CROSSBAR ARRAY...
- Publication number 20200335165
- Publication date Oct 22, 2020
- INSTITUTE OF MICROELECTRONICS-CHINESE ACADEMY OF SCIENCES
- Qi LIU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200176674
- Publication date Jun 4, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGE SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD...
- Publication number 20200066984
- Publication date Feb 27, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...
- Publication number 20200058704
- Publication date Feb 20, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTUR...
- Publication number 20190115529
- Publication date Apr 18, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THE...
- Publication number 20190081237
- Publication date Mar 14, 2019
- THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING ENDURANCE PERFORMANCE OF 3D INTEGRATED RESISTI...
- Publication number 20190006584
- Publication date Jan 3, 2019
- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCE
- Nianduan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EVALUATING THERMAL EFFECT AND REDUCING THERMAL CROSSTALK...
- Publication number 20180366643
- Publication date Dec 20, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Nianduan Lu
- G01 - MEASURING TESTING

Hangbing Lv

Person

Patents Grantslast 30 patents

Neural network operation device

Writing method and erasing method of fusion memory

Spintronic device, SOT-MRAM storage cell, storage array and in-memo...

Fusion memory

Self-rectifying resistive memory and fabrication method thereof

Resistance random access memory and method for fabricating the same

Conductive bridge semiconductor component and manufacturing method...

1S1R memory integrated structure with larger selector surface area...

Method for implementing logic calculation based on a crossbar array...

Nonvolatile resistive memory device and manufacturing method thereof

Self-gating resistive storage device having resistance transition l...

Preparation method of Cu-based resistive random access memory, and...

Selection device for use in bipolar resistive memory and manufactur...

Self-gated RRAM cell and method for manufacturing the same

Method for evaluating thermal effect and reducing thermal crosstalk...

Manufacturing method for a nonvolatile resistive switching memory d...

Preparation method of Cu-based resistive random access memory

Three-terminal atomic switching device and method of manufacturing...

Nonvolatile resistive switching memory device and manufacturing met...

Gating device cell for cross array of bipolar resistive memory cells

Metal oxide resistive switching memory and method for manufacturing...

Resistive random access memory cell and memory

Patents Applicationslast 30 patents

RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF PREPARING THE SAME

SELF-REFERENCE STORAGE STRUCTURE AND STORAGE AND CALCULATION INTEGR...

METHOD OF PREPARING PROGRAMMABLE DIODE, PROGRAMMABLE DIODE AND FERR...

MEMORY CIRCUIT STRUCTURE AND METHOD OF OPERATING MEMORY CIRCUIT STR...

COMPLEMENTARY STORAGE UNIT AND METHOD OF PREPARING THE SAME, AND CO...

DEVICE AND METHOD FOR TESTING FATIGUE CHARACTERISTICS OF SELECTOR

SYMMETRIC MEMORY CELL AND BNN CIRCUIT

MAGNETORESISTIVE DEVICE, METHOD FOR CHANGING RESISTANCE STATE THERE...

MEMORY CELL STRUCTURE, MEMORY ARRAY STRUCTURE, AND VOLTAGE BIASING...

HFO2,-BASED FERROELECTRIC CAPACITOR AND PREPARATION METHOD THEREOF,...

SELECTOR AND PREPARATION METHOD THEREOF

SPINTRONIC DEVICE, SOT-MRAM STORAGE CELL, STORAGE ARRAY AND IN-MEMO...

ARTIFICIAL SENSORY NERVOUS CIRCUIT AND MANUFACTURING METHOD THEREOF

AFFERENT NEURON CIRCUIT AND MECHANORECEPTIVE SYSTEM

NEURAL NETWORK OPERATION SYSTEM

MEMORY

WRITING METHOD AND ERASING METHOD OF FUSION MEMORY

FUSION MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PREPARING THE SAME

NEURON CIRCUIT AND NEURAL NETWORK CIRCUIT

RESISTANCE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME

SELF-RECTIFYING RESISTIVE MEMORY AND FABRICATION METHOD THEREOF

METHOD FOR IMPLEMENTING LOGIC CALCULATION BASED ON A CROSSBAR ARRAY...

1S1R MEMORY INTEGRATED STRUCTURE AND METHOD FOR FABRICATING THE SAME

CONDUCTIVE BRIDGE SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD...

SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...

SELECTION DEVICE FOR USE IN BIPOLAR RESISTIVE MEMORY AND MANUFACTUR...

SELF-GATING RESISTIVE STORAGE DEVICE AND METHOD FOR FABRICATION THE...

METHOD FOR IMPROVING ENDURANCE PERFORMANCE OF 3D INTEGRATED RESISTI...

METHOD FOR EVALUATING THERMAL EFFECT AND REDUCING THERMAL CROSSTALK...