Hann-Jye Hsu

Person

Taichung County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor device having self-aligned co...
- Patent number 7,803,692
- Issue date Sep 28, 2010
- Powerchip Semiconductor Corp.
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having self-aligned contact
- Patent number 7,612,433
- Issue date Nov 3, 2009
- Powerchip Semiconductor Corp.
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating conductive lines with silicide layer
- Patent number 7,550,372
- Issue date Jun 23, 2009
- Powerchip Semiconductor Corp.
- Su-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench gate dielectric layer
- Patent number 7,205,217
- Issue date Apr 17, 2007
- Powerchip Semiconductor Corp.
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell and fabricating method thereof
- Patent number 7,192,832
- Issue date Mar 20, 2007
- Powerchip Semiconductor Corp.
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method of manufacturing the same
- Patent number 7,091,550
- Issue date Aug 15, 2006
- Powerchip Semiconductor Corp.
- Hann-Jye Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory cell and manufacturing method thereof
- Patent number 6,821,849
- Issue date Nov 23, 2004
- Powerchip Semiconductor Corp.
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell
- Patent number 6,815,758
- Issue date Nov 9, 2004
- Powerchip Semiconductor Corp.
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device structure and method of fabricating the same
- Patent number 6,791,136
- Issue date Sep 14, 2004
- Powerchip Semiconductor Corp.
- Hann-Jye Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory cell and manufacturing method thereof
- Patent number 6,768,162
- Issue date Jul 27, 2004
- Powerchip Semiconductor Corp.
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device structure and method of fabricating the same
- Patent number 6,642,111
- Issue date Nov 4, 2003
- Powerchip Semiconductor Corp.
- Hann-Jye Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reading flash memory with silicon-oxide/nitride/oxide-si...
- Patent number 6,639,836
- Issue date Oct 28, 2003
- Powerchip Semiconductor Corp.
- Chih-Wei Hung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CO...
- Publication number 20100003796
- Publication date Jan 7, 2010
- POWERCHIP SEMICONDUCTOR CORP.
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN NON-VOLATILE MEMORY DEVICE
- Publication number 20060231909
- Publication date Oct 19, 2006
- HANN-JYE HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE CONTAINING SELF-ALIGNED CONDUCTIVE LINES AND FABRICATING...
- Publication number 20060189074
- Publication date Aug 24, 2006
- Hann-Jye Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND MANUFACTURING...
- Publication number 20060183295
- Publication date Aug 17, 2006
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING CONDUCTIVE LINES
- Publication number 20060166497
- Publication date Jul 27, 2006
- Su-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING TRENCH GATE DIELECTRIC LAYER
- Publication number 20060160306
- Publication date Jul 20, 2006
- Min-San Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
[NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME]
- Publication number 20050082600
- Publication date Apr 21, 2005
- HANN-JYE HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELL AND FABRICATING METHOD THEREOF
- Publication number 20050042826
- Publication date Feb 24, 2005
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
[SPLIT GATE FLASH MEMORY CELL AND MANUFACUTIRNG METHOD THEREOF]
- Publication number 20040197999
- Publication date Oct 7, 2004
- Ko-Hsing Chang
- H01 - BASIC ELECTRIC ELEMENTS

Hann-Jye Hsu

Person

Patents Grantslast 30 patents

Manufacturing method of semiconductor device having self-aligned co...

Semiconductor device having self-aligned contact

Method of fabricating conductive lines with silicide layer

Method for forming trench gate dielectric layer

Flash memory cell and fabricating method thereof

Non-volatile memory device and method of manufacturing the same

Split gate flash memory cell and manufacturing method thereof

Flash memory cell

Memory device structure and method of fabricating the same

Split gate flash memory cell and manufacturing method thereof

Memory device structure and method of fabricating the same

Method for reading flash memory with silicon-oxide/nitride/oxide-si...

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CO...

METHOD OF MANUFACTURING AN NON-VOLATILE MEMORY DEVICE

STRUCTURE CONTAINING SELF-ALIGNED CONDUCTIVE LINES AND FABRICATING...

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND MANUFACTURING...

METHOD OF FABRICATING CONDUCTIVE LINES

METHOD FOR FORMING TRENCH GATE DIELECTRIC LAYER

[NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME]

FLASH MEMORY CELL AND FABRICATING METHOD THEREOF

[SPLIT GATE FLASH MEMORY CELL AND MANUFACUTIRNG METHOD THEREOF]