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Hans Bernhard Pogge
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Hopewell Junction, NY, US
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last 30 patents
Information
Patent Grant
Process of forming recessed dielectric regions in a monocrystalline...
Patent number
4,307,180
Issue date
Dec 22, 1981
International Business Machines Corp.
Hans B. Pogge
G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information
Patent Grant
Method for making a lateral PNP or NPN with a high gain utilizing r...
Patent number
4,264,382
Issue date
Apr 28, 1981
International Business Machines Corporation
Narasipur G. Anantha
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming a narrow dimensioned region on a body
Patent number
4,256,514
Issue date
Mar 17, 1981
International Business Machines Corporation
Hans B. Pogge
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Lateral PNP or NPN with a high gain
Patent number
4,196,440
Issue date
Apr 1, 1980
International Business Machines Corporation
Narasipur G. Anantha
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reactive ion etching method for producing deep dielectric isolation...
Patent number
4,139,442
Issue date
Feb 13, 1979
International Business Machines Corporation
James A. Bondur
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming isolated regions of silicon utilizing reactive i...
Patent number
4,104,086
Issue date
Aug 1, 1978
International Business Machines Corporation
James Allan Bondur
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Total dielectric isolation utilizing a combination of reactive ion...
Patent number
4,104,090
Issue date
Aug 1, 1978
International Business Machines Corporation
Hans Bernhard Pogge
H01 - BASIC ELECTRIC ELEMENTS