Hans-Joachim Schulze

Person

Taufkirchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device
- Patent number 12,249,551
- Issue date Mar 11, 2025
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing and reuse of semiconductor substrates
- Patent number 12,249,504
- Issue date Mar 11, 2025
- Infineon Technologies AG
- Bernhard Goller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 12,224,317
- Issue date Feb 11, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device having a second semicond...
- Patent number 12,211,703
- Issue date Jan 28, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-device semiconductor chip with electrical access to devices a...
- Patent number 12,136,623
- Issue date Nov 5, 2024
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor device elements in a semi...
- Patent number 12,107,130
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device having a ferroelectric g...
- Patent number 12,107,128
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a silicon carbide drift zone over a sil...
- Patent number 12,107,141
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using channeling implant
- Patent number 12,057,316
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 12,027,591
- Issue date Jul 2, 2024
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structure and manufacturing m...
- Patent number 11,929,397
- Issue date Mar 12, 2024
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for processing a wide band gap semiconductor wafer using a...
- Patent number 11,887,894
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor wafer
- Patent number 11,881,406
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a porous portion, wafer composite and met...
- Patent number 11,881,397
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a bond wire o...
- Patent number 11,837,528
- Issue date Dec 5, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a ferroelectric gate stack
- Patent number 11,791,383
- Issue date Oct 17, 2023
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,764,296
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a semiconductor device
- Patent number 11,742,215
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a diode structure in a SiC semicondu...
- Patent number 11,742,391
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of re-using a silicon carbide substrate
- Patent number 11,735,642
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a strain-inducing material embedd...
- Patent number 11,728,427
- Issue date Aug 15, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a silicon carbide substrate for an electri...
- Patent number 11,721,547
- Issue date Aug 8, 2023
- Infineon Technologies AG
- Christian Hecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive manufacturing of a frontside or backside interconnect of a...
- Patent number 11,688,713
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250107115
- Publication date Mar 27, 2025
- INFINEON TECHNOLOGIES AG
- Manfred Pfaffenlehner
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250107128
- Publication date Mar 27, 2025
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SE...
- Publication number 20250105022
- Publication date Mar 27, 2025
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTI-DEVICE SEMICONDUCTOR CHIP WITH ELECTRICAL ACCESS TO DEVICES A...
- Publication number 20250022872
- Publication date Jan 16, 2025
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...
- Publication number 20240371772
- Publication date Nov 7, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND MET...
- Publication number 20240153759
- Publication date May 9, 2024
- INFINEON TECHNOLOGIES AG
- Iris MODER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA
- Publication number 20240154020
- Publication date May 9, 2024
- INFINEON TECHNOLOGIES AG
- Benedikt Stoib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...
- Publication number 20240145588
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Thomas Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240145247
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA
- Publication number 20240105832
- Publication date Mar 28, 2024
- INFINEON TECHNOLOGIES AG
- Thomas Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZORESISTIVE TRANSISTOR DEVICE AND POWER ELECTRONIC MODULE INCLUD...
- Publication number 20240090355
- Publication date Mar 14, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...
- Publication number 20240055257
- Publication date Feb 15, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device, Method of Producing a Power Semiconduct...
- Publication number 20240047457
- Publication date Feb 8, 2024
- INFINEON TECHNOLOGIES AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...
- Publication number 20240030032
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...
- Publication number 20230411460
- Publication date Dec 21, 2023
- INFINEON TECNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming a Semiconductor Device Having a Second Semicond...
- Publication number 20230395394
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...
- Publication number 20230361196
- Publication date Nov 9, 2023
- Infineon Techmologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...
- Publication number 20230343871
- Publication date Oct 26, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20230317456
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230317797
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE
- Publication number 20230299147
- Publication date Sep 21, 2023
- Infineon
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE PACKAGE
- Publication number 20230282608
- Publication date Sep 7, 2023
- Infineon Technologies Austria AG
- Edward Fürgut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A METAL SILICIDE LAYER ABOVE A SILICON CARB...
- Publication number 20230215729
- Publication date Jul 6, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER DEVICE WITH ENHANCED CHARGE CARRIER MOBILITY
- Publication number 20230178615
- Publication date Jun 8, 2023
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20230125859
- Publication date Apr 27, 2023
- INFINEON TECHNOLOGIES AG
- Daniel Schlögl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING AND REUSE OF SEMICONDUCTOR SUBSTRATES
- Publication number 20230127556
- Publication date Apr 27, 2023
- INFINEON TECHNOLOGIES AG
- Bernhard Goller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Device Including an Absorption Layer
- Publication number 20230092013
- Publication date Mar 23, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Hans-Joachim Schulze

Person

Patents Grantslast 30 patents

Power semiconductor device

Manufacturing and reuse of semiconductor substrates

Vertical power semiconductor device and manufacturing method

Methods for forming a semiconductor device having a second semicond...

Multi-device semiconductor chip with electrical access to devices a...

Semiconductor device having semiconductor device elements in a semi...

Method of producing a semiconductor device having a ferroelectric g...

Semiconductor device having a silicon carbide drift zone over a sil...

Semiconductor device fabricated using channeling implant

Method for forming a semiconductor device and a semiconductor device

Power semiconductor device with p-contact and doped insulation bloc...

Semiconductor device including trench structure and manufacturing m...

Ion beam implantation method and semiconductor device

Method of forming a semiconductor device

Methods for processing a wide band gap semiconductor wafer using a...

Method of manufacturing a semiconductor device and semiconductor wafer

Semiconductor device with a porous portion, wafer composite and met...

Semiconductor component with edge termination region

Power semiconductor device having overvoltage protection and method...

Method of manufacturing a semiconductor device having a bond wire o...

Semiconductor device having a ferroelectric gate stack

Method for manufacturing a semiconductor device

Silicon carbide device with compensation region and method of manuf...

Vertical power semiconductor device including a field stop region h...

Methods for forming a semiconductor device

Semiconductor component having a diode structure in a SiC semicondu...

Methods of re-using a silicon carbide substrate

Power semiconductor device having a strain-inducing material embedd...

Method for manufacturing a silicon carbide substrate for an electri...

Additive manufacturing of a frontside or backside interconnect of a...

Patents Applicationslast 30 patents

Power Semiconductor Device and Method of Producing a Power Semicond...

Power Semiconductor Device and Method of Producing a Power Semicond...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND VERTICAL POWER SE...

MULTI-DEVICE SEMICONDUCTOR CHIP WITH ELECTRICAL ACCESS TO DEVICES A...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...

SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND MET...

SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA

VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR COMPRISING EDGE TERMINATION AREA

PIEZORESISTIVE TRANSISTOR DEVICE AND POWER ELECTRONIC MODULE INCLUD...

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SUBSTRATE,...

Power Semiconductor Device, Method of Producing a Power Semiconduct...

METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCT...

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...

Methods for Forming a Semiconductor Device Having a Second Semicond...

Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...

Vertical Power Semiconductor Device and Manufacturing Method

POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DIE PACKAGE

METHOD OF MANUFACTURING A METAL SILICIDE LAYER ABOVE A SILICON CARB...

TRENCH POWER DEVICE WITH ENHANCED CHARGE CARRIER MOBILITY

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

MANUFACTURING AND REUSE OF SEMICONDUCTOR SUBSTRATES

Method of Forming a Semiconductor Device Including an Absorption Layer