Hans-Peter Felsl

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor transistor
- Patent number 11,018,252
- Issue date May 25, 2021
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having at least one first type transistor cell and reduced fee...
- Patent number 9,741,795
- Issue date Aug 22, 2017
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT module and a circuit
- Patent number 9,412,854
- Issue date Aug 9, 2016
- Infineon Technologies Austria AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing a semiconductor diode
- Patent number 9,385,181
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-channel HEMT
- Patent number 9,349,829
- Issue date May 24, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field ring edge termination structure a...
- Patent number 9,293,524
- Issue date Mar 22, 2016
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with reduced feedback capacitance
- Patent number 9,166,027
- Issue date Oct 20, 2015
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with improved dynamic behavior
- Patent number 9,105,682
- Issue date Aug 11, 2015
- Infineon Technologies Austria AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a channel re...
- Patent number 9,048,095
- Issue date Jun 2, 2015
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel HEMT
- Patent number 9,035,355
- Issue date May 19, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a floating semiconductor zone
- Patent number 8,872,264
- Issue date Oct 28, 2014
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the semiconductor...
- Patent number 8,860,025
- Issue date Oct 14, 2014
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trenches and method of manufacturing...
- Patent number 8,853,774
- Issue date Oct 7, 2014
- Infineon Technologies AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a dielectric structure in a trench
- Patent number 8,829,562
- Issue date Sep 9, 2014
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a floating semiconductor zone
- Patent number 8,482,062
- Issue date Jul 9, 2013
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a floating semiconductor zone
- Patent number 8,264,033
- Issue date Sep 11, 2012
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having one or more stacked zones formed within a second layer...
- Patent number 7,915,675
- Issue date Mar 29, 2011
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate including laser...
- Patent number 7,842,590
- Issue date Nov 30, 2010
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft switching semiconductor component with high robustness and low...
- Patent number 7,812,427
- Issue date Oct 12, 2010
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having one or more zones of a first conductivity type and one...
- Patent number 7,687,891
- Issue date Mar 30, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Transistor
- Publication number 20200098911
- Publication date Mar 26, 2020
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having at Least One First Type Transistor Cell and Reduced Fee...
- Publication number 20160005818
- Publication date Jan 7, 2016
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Ring Edge Termination Structure a...
- Publication number 20150318347
- Publication date Nov 5, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT
- Publication number 20150221748
- Publication date Aug 6, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
- Publication number 20150206983
- Publication date Jul 23, 2015
- INFINEON TECHNOLOGIES AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Reduced Feedback Capacitance
- Publication number 20150091053
- Publication date Apr 2, 2015
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Device Having a Channel Re...
- Publication number 20140370693
- Publication date Dec 18, 2014
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trenches and Method of Manufacturing...
- Publication number 20140151789
- Publication date Jun 5, 2014
- INFINEON TECHNOLOGIES AG
- Maria Cotorogea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Dielectric Structure in a Trench
- Publication number 20140027812
- Publication date Jan 30, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Channel HEMT
- Publication number 20130334573
- Publication date Dec 19, 2013
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE
- Publication number 20130270632
- Publication date Oct 17, 2013
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacturing the Semiconductor...
- Publication number 20130056731
- Publication date Mar 7, 2013
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE
- Publication number 20130001640
- Publication date Jan 3, 2013
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Improved Dynamic Behavior
- Publication number 20120217539
- Publication date Aug 30, 2012
- INFINEON TECHNOLOGIES AUSTRIA AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT MODULE AND A CIRCUIT
- Publication number 20120098097
- Publication date Apr 26, 2012
- Infineon Technologies Austria AG
- Hans-Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE
- Publication number 20110018029
- Publication date Jan 27, 2011
- Infineon Technologies Austria AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having One or More Stacked Zones Formed within a Second Layer...
- Publication number 20100148215
- Publication date Jun 17, 2010
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...
- Publication number 20090267200
- Publication date Oct 29, 2009
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20080283868
- Publication date Nov 20, 2008
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Soft Switching Semiconductor Component with High Robustness and Low...
- Publication number 20070278472
- Publication date Dec 6, 2007
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Hans-Peter Felsl

Person

Patents Grantslast 30 patents

Power semiconductor transistor

IGBT having at least one first type transistor cell and reduced fee...

IGBT module and a circuit

Semiconductor diode and method of manufacturing a semiconductor diode

Method of manufacturing a multi-channel HEMT

Semiconductor device with a field ring edge termination structure a...

IGBT with reduced feedback capacitance

Semiconductor component with improved dynamic behavior

Method for manufacturing a semiconductor device having a channel re...

Multi-channel HEMT

Semiconductor device having a floating semiconductor zone

Semiconductor device and method for manufacturing the semiconductor...

Semiconductor device including trenches and method of manufacturing...

Semiconductor device including a dielectric structure in a trench

Semiconductor device having a floating semiconductor zone

Semiconductor device having a floating semiconductor zone

IGBT having one or more stacked zones formed within a second layer...

Method for manufacturing a semiconductor substrate including laser...

Soft switching semiconductor component with high robustness and low...

Diode having one or more zones of a first conductivity type and one...

Patents Applicationslast 30 patents

Power Semiconductor Transistor

IGBT Having at Least One First Type Transistor Cell and Reduced Fee...

Semiconductor Device with a Field Ring Edge Termination Structure a...

METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT

Semiconductor Diode and Method of Manufacturing a Semiconductor Diode

IGBT with Reduced Feedback Capacitance

Method for Manufacturing a Semiconductor Device Having a Channel Re...

Semiconductor Device Including Trenches and Method of Manufacturing...

Semiconductor Device Including a Dielectric Structure in a Trench

Multi-Channel HEMT

SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE

Semiconductor Device and Method for Manufacturing the Semiconductor...

SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE

Semiconductor Component with Improved Dynamic Behavior

IGBT MODULE AND A CIRCUIT

SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE

IGBT Having One or More Stacked Zones Formed within a Second Layer...

METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...

Semiconductor Device

Soft Switching Semiconductor Component with High Robustness and Low...